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通过原子层沉积制备的串联界面(Ni S -MoS )@TiO复合结构作为高效析氢电催化剂

A Tandem Interfaced (Ni S -MoS )@TiO Composite Fabricated by Atomic Layer Deposition as Efficient HER Electrocatalyst.

作者信息

Guo Daying, Wan Zhixin, Fang Guoyong, Zhu Mengqi, Xi Bin

机构信息

School of Materials Science and Engineering, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, PFCM Lab, Sun Yat-sen University, Guangzhou, 510275, China.

Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, China.

出版信息

Small. 2022 Jun;18(24):e2201896. doi: 10.1002/smll.202201896. Epub 2022 May 12.

Abstract

Reported herein is a highly active and durable hydrogen evolution reaction (HER) electrocatalyst, which is constructed following a tandem interface strategy and functional in alkaline and even neutral medium (pH ≈ 7). The ternary composite material, consisting of conductive nickel foam (NF) substrate, Ni S -MoS heterostructure, and TiO coating, is synthesized by the hydrothermal method and atomic layer deposition (ALD) technique. Representative results include: (1) versatile characterizations confirm the proposed composite structure and strong electronic interactions among comprised sulfide and oxide species; (2) the material outperforms commercial Pt/C by recording an overpotential of 115 mV and a Tafel slope of 67 mV dec under neutral conditions. A long-term stability in alkaline electrolytes up to 200 h and impressive overall water splitting behavior (1.56 V @ 10 mA cm ) are documented; (3) implementation of ALD oxide tandem layer is crucial to realize the design concept with superior HER performance by modulating a variety of heterointerface and intermediates electronic structure.

摘要

本文报道了一种高活性且耐用的析氢反应(HER)电催化剂,它是按照串联界面策略构建的,在碱性甚至中性介质(pH≈7)中具有活性。由导电泡沫镍(NF)基底、NiS - MoS异质结构和TiO涂层组成的三元复合材料,是通过水热法和原子层沉积(ALD)技术合成的。代表性结果包括:(1)多种表征证实了所提出的复合结构以及所包含的硫化物和氧化物物种之间强烈的电子相互作用;(2)该材料在中性条件下记录到115 mV的过电位和67 mV dec的塔菲尔斜率,优于商业Pt/C。记录到在碱性电解质中长达200小时的长期稳定性以及令人印象深刻的全水解行为(1.56 V @ 10 mA cm);(3)ALD氧化物串联层的实施对于通过调节各种异质界面和中间体电子结构来实现具有优异HER性能的设计概念至关重要。

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