Basyooni Mohamed A, Zaki Shrouk E, Tihtih Mohammed, Eker Yasin Ramazan, Ateş Şule
Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, Turkey.
Science and Technology Research and Application Center (BITAM), Necmettin Erbakan University, Konya 42090, Turkey.
J Phys Condens Matter. 2022 Jun 14;34(32). doi: 10.1088/1361-648X/ac7189.
The application of the photonic superlattice in advanced photonics has become a demanding field, especially for two-dimensional and strongly correlated oxides. Because it experiences an abrupt metal-insulator transition near ambient temperature, where the electrical resistivity varies by orders of magnitude, vanadium oxide (VO) shows potential as a building block for infrared switching and sensing devices. We reported a first principle study of superlattice structures of VOas a strongly correlated phase transition material and tungsten diselenide (WSe) as a two-dimensional transition metal dichalcogenide layer. Based on first-principles calculations, we exploit the effect of semiconductor monoclinic and metallic tetragonal state of VOwith WSein a photonic superlattices structure through the near and mid-infrared (NIR-MIR) thermochromic phase transition regions. By increasing the thickness of the VOlayer, the photonic bandgap (PhB) gets red-shifted. We observed linear dependence of the PhB width on the VOthickness. For the monoclinic case of VO, the number of the forbidden bands increase with the number of layers of WSe. New forbidden gaps are preferred to appear at a slight angle of incidence, and the wider one can predominate at larger angles. We presented an efficient way to control the flow of the NIR-MIR in both summer and winter environments for phase transition and photonic thermochromic applications. This study's findings may help understand vanadium oxide's role in tunable photonic superlattice for infrared switchable devices and optical filters.
光子超晶格在先进光子学中的应用已成为一个备受关注的领域，特别是对于二维和强关联氧化物而言。由于氧化钒（VO）在接近室温时会经历突然的金属 - 绝缘体转变，此时其电阻率会变化几个数量级，因此VO展现出作为红外开关和传感设备构建模块的潜力。我们报道了一项关于VO作为强关联相变材料和二硒化钨（WSe）作为二维过渡金属二硫属化物层的超晶格结构的第一性原理研究。基于第一性原理计算，我们通过近红外和中红外（NIR - MIR）热致变色相变区域，研究了VO的半导体单斜相和金属四方相状态与WSe在光子超晶格结构中的相互作用。通过增加VO层的厚度，光子带隙（PhB）会发生红移。我们观察到PhB宽度与VO厚度呈线性关系。对于VO的单斜相情况，禁带数量随着WSe层数的增加而增加。新的禁带更倾向于在小入射角处出现，而较宽的禁带在较大入射角处占主导。我们提出了一种在夏季和冬季环境中控制NIR - MIR流动的有效方法，用于相变和光子热致变色应用。这项研究的结果可能有助于理解氧化钒在用于红外可切换器件和光学滤波器的可调谐光子超晶格中的作用。
