Photonic bandgap engineering in (VO)/(WSe)photonic superlattice for versatile near- and mid-infrared phase transition applications.

The application of the photonic superlattice in advanced photonics has become a demanding field, especially for two-dimensional and strongly correlated oxides. Because it experiences an abrupt metal-insulator transition near ambient temperature, where the electrical resistivity varies by orders of magnitude, vanadium oxide (VO) shows potential as a building block for infrared switching and sensing devices. We reported a first principle study of superlattice structures of VOas a strongly correlated phase transition material and tungsten diselenide (WSe) as a two-dimensional transition metal dichalcogenide layer. Based on first-principles calculations, we exploit the effect of semiconductor monoclinic and metallic tetragonal state of VOwith WSein a photonic superlattices structure through the near and mid-infrared (NIR-MIR) thermochromic phase transition regions. By increasing the thickness of the VOlayer, the photonic bandgap (PhB) gets red-shifted. We observed linear dependence of the PhB width on the VOthickness. For the monoclinic case of VO, the number of the forbidden bands increase with the number of layers of WSe. New forbidden gaps are preferred to appear at a slight angle of incidence, and the wider one can predominate at larger angles. We presented an efficient way to control the flow of the NIR-MIR in both summer and winter environments for phase transition and photonic thermochromic applications. This study's findings may help understand vanadium oxide's role in tunable photonic superlattice for infrared switchable devices and optical filters.