Yin Chunyu, Fu Baoqin, Jiao Yongjun, Duan Zhengang, Wu Lei, Zou Yu, Liu Shichao
Science and Technology on Reactor System Design Technology Laboratory, Nuclear Power Institute of China, Chengdu 610213, China.
Key Laboratory of Radiation Physics and Technology of the Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China.
Materials (Basel). 2022 Apr 21;15(9):3008. doi: 10.3390/ma15093008.
Silicon carbide (SiC) is a promising structural and cladding material for accident tolerant fuel cladding of nuclear reactor due to its excellent properties. However, when exposed to severe environments (e.g., during neutron irradiation), lattice defects are created in amounts significantly greater than normal concentrations. Then, a series of radiation damage behaviors (e.g., radiation swelling) appear. Accurate understanding of radiation damage of nuclear materials is the key to the design of new fuel cladding materials. Multi-scale computational simulations are often required to understand the physical mechanism of radiation damage. In this work, the effect of neutron irradiation on the volume swelling of cubic-SiC film with 0.3 mm was studied by using the combination of molecular dynamics (MD) and rate theory (RT). It was found that for C-vacancy (C), C-interstitial (C), Si-vacancy (Si), Si-interstitial (Si), and Si-antisite (Si), the volume of supercell increases linearly with the increase of concentration of these defects, while the volume of supercell decreases linearly with the increase of defect concentration for C-antisite (C). Furthermore, according to the neutron spectrum of a certain reactor, one RT model was constructed to simulate the evolution of point defect under neutron irradiation. Then, the relationship between the volume swelling and the dose of neutrons can be obtained through the results of MD and RT. It was found that swelling typically increases logarithmically with radiation dose and saturates at relatively low doses, and that the critical dose for abrupt transition of volume is consistent with the available experimental data, which indicates that the rate theory model can effectively describe the radiation damage evolution process of SiC. This work not only presents a systematic study on the relationship between various point defect and excess volume, but also gives a good example of multi-scale modelling through coupling the results of binary collision, MD and RT methods, etc., regardless of the multi-scale modelling only focus on the evolution of primary point defects.
碳化硅(SiC)因其优异的性能,是一种用于核反应堆事故容错燃料包壳的有前景的结构和包层材料。然而,当暴露于恶劣环境中(例如在中子辐照期间),晶格缺陷的产生量会显著高于正常浓度。然后,会出现一系列辐射损伤行为(例如辐射肿胀)。准确理解核材料的辐射损伤是设计新型燃料包壳材料的关键。通常需要多尺度计算模拟来理解辐射损伤的物理机制。在这项工作中,通过结合分子动力学(MD)和速率理论(RT),研究了中子辐照对厚度为0.3毫米的立方SiC薄膜体积肿胀的影响。研究发现,对于C空位(C)、C间隙原子(C)、Si空位(Si)、Si间隙原子(Si)和Si反位原子(Si),超胞体积随这些缺陷浓度的增加呈线性增加,而对于C反位原子(C),超胞体积随缺陷浓度的增加呈线性减小。此外,根据某一反应堆的中子能谱,构建了一个RT模型来模拟中子辐照下点缺陷的演化。然后,通过MD和RT的结果可以得到体积肿胀与中子剂量之间的关系。研究发现,肿胀通常随辐射剂量呈对数增加,并在相对较低剂量下达到饱和,并且体积突变的临界剂量与现有实验数据一致,这表明速率理论模型可以有效地描述SiC的辐射损伤演化过程。这项工作不仅对各种点缺陷与过量体积之间的关系进行了系统研究,而且通过耦合二元碰撞、MD和RT方法等结果,给出了一个多尺度建模的良好示例,尽管多尺度建模仅关注初级点缺陷的演化。