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电流密度斜坡变化对AA2024-T3生长速率和结构的影响

Effect of Current Density Ramping on the Growth Rate and Structure of AA2024-T3.

作者信息

Totaro Peter, Khusid Boris

机构信息

Otto H. York Department of Chemical and Materials Engineering, New Jersey Institute of Technology, University Heights, Newark, NJ 07102, USA.

Aerotech Processing Solutions, 57 Wood St., Paterson, NJ 07524, USA.

出版信息

Materials (Basel). 2022 May 1;15(9):3258. doi: 10.3390/ma15093258.

DOI:10.3390/ma15093258
PMID:35591592
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9105804/
Abstract

The presented study successfully demonstrated advantages of multistep anodization of AA2024-T3. Coating properties and morphology were studied in detail for five anodization processes: a conventional Base process with a constant applied current density and processes with current density applied in one (OS1 and OS2) and five (MS1 and MS2) steps at different magnitudes during the ramp period. Due to lower oxygen infusion, processes MS1 and MS2 produced a more intact coating with reduced porosity and enhanced abrasion resistance and hardness. The presented results clearly demonstrate that starting anodization at a low voltage and then slowly ramping current density will form coatings with a higher aluminum/oxygen ratio and enhanced properties over a shorter period of processing.

摘要

本研究成功展示了AA2024-T3多步阳极氧化的优势。详细研究了五种阳极氧化工艺的涂层性能和形态：一种是采用恒定施加电流密度的传统基础工艺，以及在斜坡期以不同幅度分一步（OS1和OS2）和五步（MS1和MS2）施加电流密度的工艺。由于较低的氧气注入量，MS1和MS2工艺产生了更完整的涂层，孔隙率降低，耐磨性和硬度增强。研究结果清楚地表明，在低电压下开始阳极氧化，然后缓慢提高电流密度，将在更短的加工时间内形成具有更高铝/氧比和增强性能的涂层。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/01731fc3e227/materials-15-03258-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/896eff4eba5f/materials-15-03258-g001.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/6a856daa9e47/materials-15-03258-g005a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/13e93aef4ec9/materials-15-03258-g006a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/f7047e98b2f3/materials-15-03258-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/50f6d71723de/materials-15-03258-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/b34b407e95d3/materials-15-03258-g009a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/712b1746f5e1/materials-15-03258-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/d5652a8c91e6/materials-15-03258-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/01731fc3e227/materials-15-03258-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/896eff4eba5f/materials-15-03258-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/c712f67b1b63/materials-15-03258-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/a5af83d5dcdd/materials-15-03258-g003a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/7095736bf846/materials-15-03258-g004a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/6a856daa9e47/materials-15-03258-g005a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/13e93aef4ec9/materials-15-03258-g006a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/f7047e98b2f3/materials-15-03258-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/50f6d71723de/materials-15-03258-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/b34b407e95d3/materials-15-03258-g009a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/712b1746f5e1/materials-15-03258-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/d5652a8c91e6/materials-15-03258-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/845a/9105804/01731fc3e227/materials-15-03258-g012.jpg

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