Ma Jiahui, Liu Hefei, Yang Ning, Zou Jingyi, Lin Sen, Zhang Yuhao, Zhang Xu, Guo Jing, Wang Han
Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL, 32611, USA.
Adv Mater. 2022 Dec;34(48):e2202371. doi: 10.1002/adma.202202371. Epub 2022 Oct 27.
Memory technologies and applications implemented fully or partially using emerging 2D materials have attracted increasing interest in the research community in recent years. Their unique characteristics provide new possibilities for highly integrated circuits with superior performances and low power consumption, as well as special functionalities. Here, an overview of progress in 2D-material-based memory technologies and applications on the circuit level is presented. In the material growth and fabrication aspects, the advantages and disadvantages of various methods for producing large-scale 2D memory devices are discussed. Reports on 2D-material-based integrated memory circuits, from conventional dynamic random-access memory, static random-access memory, and flash memory arrays, to emerging memristive crossbar structures, all the way to 3D monolithic stacking architecture, are systematically reviewed. Comparisons between experimental implementations and theoretical estimations for different integration architectures are given in terms of the critical parameters in 2D memory devices. Attempts to use 2D memory arrays for in-memory computing applications, mostly on logic-in-memory and neuromorphic computing, are summarized here. Finally, challenges that impede the large-scale applications of 2D-material-based memory are reviewed, and perspectives on possible approaches toward a more reliable system-level fabrication are also given, hopefully shedding some light on future research.
近年来，完全或部分使用新兴二维材料实现的存储技术及应用在研究领域引起了越来越多的关注。其独特特性为高性能、低功耗的高度集成电路以及特殊功能提供了新的可能性。在此，对基于二维材料的存储技术及电路级应用的进展进行概述。在材料生长和制造方面，讨论了用于生产大规模二维存储器件的各种方法的优缺点。对基于二维材料的集成存储电路的报告进行了系统综述，从传统的动态随机存取存储器、静态随机存取存储器和闪存阵列，到新兴的忆阻交叉开关结构，一直到三维单片堆叠架构。根据二维存储器件的关键参数，给出了不同集成架构的实验实现与理论估计之间的比较。这里总结了将二维存储阵列用于内存计算应用的尝试，主要是逻辑内存和神经形态计算方面。最后，回顾了阻碍基于二维材料的存储器大规模应用的挑战，并给出了关于实现更可靠系统级制造的可能方法的展望，希望能为未来研究提供一些启示。
