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CsI(Tl) 微方台体硅壁厚度对X射线成像中结构化CsI(Tl)闪烁屏性能的影响

Influence of Si wall thickness of CsI(Tl) micro-square-frustums on the performance of the structured CsI(Tl) scintillation screen in X-ray imaging.

作者信息

Sun Zhixiang, Gu Mu, Liu Xiaolin, Liu Bo, Zhang Juannan, Huang Shiming, Ni Chen

机构信息

Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.

出版信息

Sci Rep. 2022 May 24;12(1):8748. doi: 10.1038/s41598-022-12673-9.

Abstract

To improve the detection efficiency of the structured scintillation screen with CsI(Tl) micro-square-frustums based on oxidized Si micropore array template in the case of a period as small as microns, the influence of Si wall thickness of the CsI(Tl) micro-square-frustums on the performance of the structured screen in X-ray imaging was investigated. The results show that when CsI(Tl) at the bottom of the screen is structured, the detective quantum efficiency (DQE) improves at almost all spatial frequency as the top thickness of the Si wall t decreases. However, when CsI (Tl) at the bottom of the screen is not structured, the DQE becomes better at low-frequency and worse at high-frequency as t decreases. The results can provide guidance for optimizing t according to the comprehensive requirements of detection efficiency and spatial resolution in X-ray imaging.

摘要

为了在周期小至微米的情况下提高基于氧化硅微孔阵列模板的 CsI(Tl) 微方台结构闪烁屏的探测效率,研究了 CsI(Tl) 微方台的硅壁厚度对 X 射线成像中该结构屏性能的影响。结果表明,当屏底部的 CsI(Tl) 为结构化时,随着硅壁顶部厚度 t 的减小,几乎在所有空间频率下探测量子效率(DQE)均提高。然而,当屏底部的 CsI(Tl) 非结构化时,随着 t 的减小,DQE 在低频时变好,在高频时变差。这些结果可为根据 X 射线成像中探测效率和空间分辨率的综合要求优化 t 提供指导。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c022/9130278/3237feed49b3/41598_2022_12673_Fig1_HTML.jpg

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