新型高隔离度和高电容比射频微机电系统开关：设计、分析与性能验证

Novel High Isolation and High Capacitance Ratio RF MEMS Switch: Design, Analysis and Performance Verification.

作者信息

Deng Zhongliang, Wang Yucheng, Deng Kun, Lai Chengqi, Zhou Jiali

机构信息

School of Electronic Engineering, Beijing University of Posts and Telecommunications, Haidian District, Beijing 100876, China.

School of Automation, Beijing University of Posts and Telecommunications, Haidian District, Beijing 100876, China.

出版信息

Micromachines (Basel). 2022 Apr 19;13(5):646. doi: 10.3390/mi13050646.

DOI:10.3390/mi13050646

PMID:35630113

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9147631/

Abstract

In this paper, a novel high isolation and high-capacitance-ratio radio-frequency micro-electromechanical systems (RF MEMS) switch working at Ka-band is designed, fabricated, measured and analyzed. The proposed RF MEMS switch mainly consists of a MEMS metallic beam, coplanar waveguide (CPW) transmission line, dielectric layer and metal-insulator-metal (MIM) fixed capacitors. The measured results indicate that the insertion loss is better than 0.5 dB at 32 GHz, and the isolation is more than 35 dB at the resonant frequency. From the fitted results, the capacitance ratio is 246.3. Compared with traditional MEMS capacitive switches, this proposed MEMS switch exhibits a high capacitance ratio and provides a wonderful solution for cutting-edge performance in 5G and other high-performance applications.

摘要

本文设计、制作、测量并分析了一种工作在Ka波段的新型高隔离度、高电容比射频微机电系统（RF MEMS）开关。所提出的RF MEMS开关主要由一个MEMS金属梁、共面波导（CPW）传输线、介质层和金属-绝缘体-金属（MIM）固定电容组成。测量结果表明，在32 GHz时插入损耗优于0.5 dB，在谐振频率处隔离度大于35 dB。从拟合结果来看，电容比为246.3。与传统的MEMS电容开关相比，所提出的这种MEMS开关具有高电容比，为5G及其他高性能应用中的前沿性能提供了一个出色的解决方案。