Abbas Haider, Li Jiayi, Ang Diing Shenp
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore.
Micromachines (Basel). 2022 Apr 30;13(5):725. doi: 10.3390/mi13050725.
Due to a rapid increase in the amount of data, there is a huge demand for the development of new memory technologies as well as emerging computing systems for high-density memory storage and efficient computing. As the conventional transistor-based storage devices and computing systems are approaching their scaling and technical limits, extensive research on emerging technologies is becoming more and more important. Among other emerging technologies, CBRAM offers excellent opportunities for future memory and neuromorphic computing applications. The principles of the CBRAM are explored in depth in this review, including the materials and issues associated with various materials, as well as the basic switching mechanisms. Furthermore, the opportunities that CBRAMs provide for memory and brain-inspired neuromorphic computing applications, as well as the challenges that CBRAMs confront in those applications, are thoroughly discussed. The emulation of biological synapses and neurons using CBRAM devices fabricated with various switching materials and device engineering and material innovation approaches are examined in depth.
由于数据量的迅速增加,对新的存储技术以及用于高密度存储和高效计算的新兴计算系统的开发有着巨大需求。随着传统的基于晶体管的存储设备和计算系统正接近其缩放和技术极限,对新兴技术进行广泛研究变得越来越重要。在其他新兴技术中,阻变随机存取存储器(CBRAM)为未来的存储器和神经形态计算应用提供了绝佳机会。本综述深入探讨了CBRAM的原理,包括与各种材料相关的材料和问题,以及基本的开关机制。此外,还全面讨论了CBRAM为存储器和受大脑启发的神经形态计算应用所提供的机会,以及CBRAM在这些应用中面临的挑战。深入研究了使用各种开关材料制造的CBRAM器件以及器件工程和材料创新方法对生物突触和神经元的仿真。