Zhang Gong, Chen Yue, Zheng Zijie, Shao Rui, Zhou Jiuren, Zhou Zuopu, Jiao Leming, Zhang Jishen, Wang Haibo, Kong Qiwen, Sun Chen, Ni Kai, Wu Jixuan, Chen Jiezhi, Gong Xiao
Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 119077, Singapore.
Department of Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY, 14623, USA.
Light Sci Appl. 2024 Aug 23;13(1):206. doi: 10.1038/s41377-024-01555-6.
To reduce system complexity and bridge the interface between electronic and photonic circuits, there is a high demand for a non-volatile memory that can be accessed both electrically and optically. However, practical solutions are still lacking when considering the potential for large-scale complementary metal-oxide semiconductor compatible integration. Here, we present an experimental demonstration of a non-volatile photonic-electronic memory based on a 3-dimensional monolithic integrated ferroelectric-silicon ring resonator. We successfully demonstrate programming and erasing the memory using both electrical and optical methods, assisted by optical-to-electrical-to-optical conversion. The memory cell exhibits a high optical extinction ratio of 6.6 dB at a low working voltage of 5 V and an endurance of 4 × 10 cycles. Furthermore, the multi-level storage capability is analyzed in detail, revealing stable performance with a raw bit-error-rate smaller than 5.9 × 10. This ground-breaking work could be a key technology enabler for future hybrid electronic-photonic systems, targeting a wide range of applications such as photonic interconnect, high-speed data communication, and neuromorphic computing.
为了降低系统复杂性并弥合电子和光子电路之间的接口，对一种能够通过电和光两种方式进行访问的非易失性存储器有很高的需求。然而，考虑到大规模互补金属氧化物半导体兼容集成的潜力时，仍然缺乏实际的解决方案。在此，我们展示了基于三维单片集成铁电 - 硅环形谐振器的非易失性光子 - 电子存储器的实验演示。我们成功地演示了使用电和光两种方法对存储器进行编程和擦除，并借助光 - 电 - 光转换。该存储单元在5V的低工作电压下表现出6.6dB的高光消光比和4×10次循环的耐久性。此外，还详细分析了多级存储能力，揭示了原始误码率小于5.9×10的稳定性能。这项开创性的工作可能成为未来混合电子 - 光子系统的关键技术推动因素，目标是广泛的应用，如光子互连、高速数据通信和神经形态计算。
