Lee Chou-Yuan, Wang Ching-Shan, Wang Fang-Hsing, Liu Han-Wen, Yang Cheng-Fu
School of Big Data, Fuzhou University of International Studies and Trade, Fuzhou 350202, China.
Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan.
ACS Omega. 2022 May 12;7(20):17384-17392. doi: 10.1021/acsomega.2c01531. eCollection 2022 May 24.
In this study, a sapphire substrate with a patterned concave structure was used to prepare ZnO film/A-B glue, and the ZnO film/A-B glue with a patterned convex matrix was transferred onto a silicon wafer using the lift-off technology as the seed layer. Then, the hydrothermal method with different Zn(CHCOO) and CHN concentrations as precursors was used to synthesize ZnO nanoflower arrays on the patterned convex ZnO seed layer. XRD pattern, FESEM, FIB, and photoluminescence (PL) spectrometry were employed to observe and analyze the properties of the synthesized ZnO nanoflower arrays. When Zn(CHCOO) and CHN concentrations were 0.01, 0.02, 0.03, and 0.04 M, the average heights of the ZnO nanorods in the ZnO nanoflower arrays were 993, 1500, 1550, and 1650 nm, the average diameters of the ZnO nanorods were 50, 90, 105, and 225 nm, and the aspect ratios (/) of the ZnO nanorods were 19.9, 16.7, 14.8, and 7.33, respectively. A simple statistical and analytical method was investigated to estimate the densities (number of nanorods) of the ZnO nanoflower arrays in one 1 μm × 1 μm area. The total surface area () of the ZnO nanoflower arrays first increased from 5.05 × 10 and then reached a maximum value of 1.20 × 10 nm as Zn(CHCOO) and CHN concentrations increased from 0.01 to 0.02 M. For the systhesized ZnO nanoflower arrays, as the Zn(CHCOO) and CHN concentrations increased from 0.01 to 0.04 M, their total volume () increased from the 6.23 × 10 to 5.90 × 10 nm and the / ratio decreased from 8.10 × 10 to 1.84 × 10. We found that ZnO nanoflower arrays with Zn(CHCOO) and CHN concentrations of 0.2 M presented the maximum PL emission intensities. The calculated / ratios and X-ray photoelectron spectroscopy analyses are used to discuss the reasons for these results.
在本研究中，使用具有图案化凹面结构的蓝宝石衬底制备ZnO薄膜/A - B胶，并利用剥离技术将具有图案化凸面矩阵的ZnO薄膜/A - B胶转移到硅片上作为种子层。然后，采用以不同浓度的Zn(CH₃COO)₂和C₆H₁₂N₄为前驱体的水热法，在图案化的凸面ZnO种子层上合成ZnO纳米花阵列。利用X射线衍射图谱（XRD）、场发射扫描电子显微镜（FESEM）、聚焦离子束（FIB）和光致发光（PL）光谱对合成的ZnO纳米花阵列的性能进行观察和分析。当Zn(CH₃COO)₂和C₆H₁₂N₄的浓度分别为0.01、0.02、0.03和0.04 M时，ZnO纳米花阵列中ZnO纳米棒的平均高度分别为993、1500、1550和1650 nm，ZnO纳米棒的平均直径分别为50、90、105和225 nm，ZnO纳米棒的长径比（/）分别为19.9、16.7、14.8和7.33。研究了一种简单的统计和分析方法来估计1μm×1μm区域内ZnO纳米花阵列的密度（纳米棒数量）。随着Zn(CH₃COO)₂和C₆H₁₂N₄浓度从0.01 M增加到0.02 M，ZnO纳米花阵列的总表面积（）首先从5.05×10增加，然后达到最大值1.20×10 nm²。对于合成的ZnO纳米花阵列，随着Zn(CH₃COO)₂和C₆H₁₂N₄浓度从0.01 M增加到0.04 M，它们的总体积（）从6.23×10增加到5.90×10 nm³，/比值从8.10×10降低到1.84×10。我们发现，当Zn(CH₃COO)₂和C₆H₁₂N₄浓度为0.2 M时，ZnO纳米花阵列呈现出最大的PL发射强度。通过计算/比值和X射线光电子能谱分析来探讨这些结果的原因。
