Georgiadou Dimitra G, Wijeyasinghe Nilushi, Solomeshch Olga, Tessler Nir, Anthopoulos Thomas D
Electronics and Computer Science, University of Southampton, Highfield Campus, Southampton SO17 1BJ, United Kingdom.
Department of Physics, Imperial College London, Prince Consort Road, South Kensington, London SW7 2AZ, United Kingdom.
ACS Appl Mater Interfaces. 2022 Jul 6;14(26):29993-29999. doi: 10.1021/acsami.1c22856. Epub 2022 Jun 1.
Schottky diodes based on inexpensive materials that can be processed using simple manufacturing methods are of particular importance for the next generation of flexible electronics. Although a number of high-frequency n-type diodes and rectifiers have been demonstrated, the progress with p-type diodes is lagging behind, mainly due to the intrinsically low conductivities of existing p-type semiconducting materials that are compatible with low-temperature, flexible, substrate-friendly processes. Herein, we report on CuSCN Schottky diodes, where the semiconductor is processed from solution, featuring coplanar Al-Au nanogap electrodes (<15 nm), patterned via adhesion lithography. The abundant CuSCN material is doped with the molecular p-type dopant fluorofullerene CF to improve the diode's operating characteristics. Rectifier circuits fabricated with the doped CuSCN/CF diodes exhibit a 30-fold increase in the cutoff frequency as compared to pristine CuSCN diodes (from 140 kHz to 4 MHz), while they are able to deliver output voltages of >100 mV for a = ±5 V at the commercially relevant frequency of 13.56 MHz. The enhanced diode and circuit performance is attributed to the improved charge transport across CuSCN induced by CF. The ensuing diode technology can be used in flexible complementary circuits targeting low-energy-budget applications for the emerging internet of things device ecosystem.
基于可采用简单制造方法进行加工的廉价材料制成的肖特基二极管，对于下一代柔性电子器件尤为重要。尽管已经展示了许多高频n型二极管和整流器，但p型二极管的进展滞后，主要是因为与低温、柔性、对衬底友好的工艺兼容的现有p型半导体材料的固有电导率较低。在此，我们报道了CuSCN肖特基二极管，其中半导体由溶液加工而成，具有通过粘附光刻图案化的共面Al-Au纳米间隙电极（<15 nm）。大量的CuSCN材料掺杂有分子p型掺杂剂氟富勒烯CF，以改善二极管的工作特性。与原始CuSCN二极管相比，用掺杂的CuSCN/CF二极管制造的整流电路截止频率提高了30倍（从140 kHz提高到4 MHz），同时在13.56 MHz的商业相关频率下，对于±5 V的输入信号，它们能够提供>100 mV的输出电压。二极管和电路性能的增强归因于CF诱导的CuSCN中电荷传输的改善。由此产生的二极管技术可用于针对新兴物联网设备生态系统中低能量预算应用的柔性互补电路。
