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氟化富勒烯掺杂剂对有机薄膜晶体管的双重有益作用:结构稳定性与性能提升

Double Beneficial Role of Fluorinated Fullerene Dopants on Organic Thin-Film Transistors: Structural Stability and Improved Performance.

作者信息

Babuji Adara, Temiño Inés, Pérez-Rodríguez Ana, Solomeshch Olga, Tessler Nir, Vila Maria, Li Jinghai, Mas-Torrent Marta, Ocal Carmen, Barrena Esther

机构信息

Instituto de Ciencia de Materiales de Barcelona (ICMAB-CSIC), 08193 Bellaterra, Barcelona, Spain.

Electrical Engineering Department, Nanoelectronic Center, Technion, 32000 Haifa, Israel.

出版信息

ACS Appl Mater Interfaces. 2020 Jun 24;12(25):28416-28425. doi: 10.1021/acsami.0c06418. Epub 2020 Jun 9.

DOI:10.1021/acsami.0c06418
PMID:32460481
Abstract

The present work assesses improved carrier injection in organic field-effect transistors by contact doping and provides fundamental insight into the multiple impacts that the dopant/semiconductor interface details have on the long-term and thermal stability of devices. We investigate donor [1]benzothieno[3,2-]-[1]benzothiophene (BTBT) derivatives with one and two octyl side chains attached to the core, therefore constituting asymmetric (BTBT-C8) and symmetric (C8-BTBT-C8) molecules, respectively. Our results reveal that films formed out of the asymmetric BTBT-C8 expose the same alkyl-terminated surface as the C8-BTBT-C8 films do. In both cases, the consequence of depositing fluorinated fullerene (CF) as a molecular p-dopant is the formation of CF crystalline islands decorating the step edges of the underlying semiconductor film surface. We demonstrate that local work function changes along with a peculiar nanomorphology lead to the double beneficial effect of lowering the contact resistance and providing long-term and enhanced thermal stability of the devices.

摘要

本工作通过接触掺杂评估了有机场效应晶体管中改进的载流子注入,并深入了解了掺杂剂/半导体界面细节对器件长期稳定性和热稳定性的多重影响。我们研究了核心连接有一个和两个辛基侧链的供体[1]苯并噻吩并[3,2 -][1]苯并噻吩(BTBT)衍生物,因此分别构成了不对称(BTBT - C8)和对称(C8 - BTBT - C8)分子。我们的结果表明,由不对称的BTBT - C8形成的薄膜与C8 - BTBT - C8薄膜具有相同的烷基端接表面。在这两种情况下,沉积氟化富勒烯(CF)作为分子p型掺杂剂的结果是形成了装饰下层半导体薄膜表面台阶边缘的CF结晶岛。我们证明,局部功函数的变化以及特殊的纳米形态导致了降低接触电阻以及提供器件长期和增强热稳定性的双重有益效果。

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引用本文的文献

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