Loganathan Kalaivanan, Faber Hendrik, Yengel Emre, Seitkhan Akmaral, Bakytbekov Azamat, Yarali Emre, Adilbekova Begimai, AlBatati Afnan, Lin Yuanbao, Felemban Zainab, Yang Shuai, Li Weiwei, Georgiadou Dimitra G, Shamim Atif, Lidorikis Elefterios, Anthopoulos Thomas D
Physical Science and Engineering Division, KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
Computer, Electrical and Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
Nat Commun. 2022 Jun 7;13(1):3260. doi: 10.1038/s41467-022-30876-6.
The massive deployment of fifth generation and internet of things technologies requires precise and high-throughput fabrication techniques for the mass production of radio frequency electronics. We use printable indium-gallium-zinc-oxide semiconductor in spontaneously formed self-aligned <10 nm nanogaps and flash-lamp annealing to demonstrate rapid manufacturing of nanogap Schottky diodes over arbitrary size substrates operating in 5 G frequencies. These diodes combine low junction capacitance with low turn-on voltage while exhibiting cut-off frequencies (intrinsic) of >100 GHz. Rectifier circuits constructed with these co-planar diodes can operate at ~47 GHz (extrinsic), making them the fastest large-area electronic devices demonstrated to date.
第五代技术和物联网技术的大规模部署需要精确且高通量的制造技术来大规模生产射频电子产品。我们在自发形成的自对准<10纳米纳米间隙中使用可印刷铟镓锌氧化物半导体，并进行闪光灯退火，以证明在5G频率下工作的任意尺寸基板上能够快速制造纳米间隙肖特基二极管。这些二极管兼具低结电容和低开启电压，同时展现出大于100吉赫兹的截止频率（本征）。用这些共面二极管构建的整流电路可在约47吉赫兹（非本征）下工作，使其成为迄今为止所展示的最快的大面积电子器件。
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