Miao Peng, Qin Jing-Kai, Shen Yunfeng, Su Huimin, Dai Junfeng, Song Bo, Du Yunchen, Sun Mengtao, Zhang Wei, Wang Hsing-Lin, Xu Cheng-Yan, Xu Ping
MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150001, China.
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China.
Small. 2018 Apr;14(14):e1704079. doi: 10.1002/smll.201704079. Epub 2018 Feb 7.
2D transition metal dichalcogenides materials are explored as potential surface-enhanced Raman spectroscopy substrates. Herein, a systematic study of the Raman enhancement mechanism on distorted 1T (1T') rhenium disulfide (ReS ) nanosheets is demonstrated. Combined Raman and photoluminescence studies with the introduction of an Al O dielectric layer unambiguously reveal that Raman enhancement on ReS materials is from a charge transfer process rather than from an energy transfer process, and Raman enhancement is inversely proportional while the photoluminescence quenching effect is proportional to the layer number (thickness) of ReS nanosheets. On monolayer ReS film, a strong resonance-enhanced Raman scattering effect dependent on the laser excitation energy is detected, and a detection limit as low as 10 m can be reached from the studied dye molecules such as rhodamine 6G and methylene blue. Such a high enhancement factor achieved through enhanced charge interaction between target molecule and substrate suggests that with careful consideration of the layer-number-dependent feature and excitation-energy-related resonance effect, ReS is a promising Raman enhancement platform for sensing applications.
二维过渡金属二硫属化物材料被探索作为潜在的表面增强拉曼光谱基底。在此,展示了对扭曲的1T(1T')二硫化铼(ReS₂)纳米片上拉曼增强机制的系统研究。通过引入Al₂O₃介电层,结合拉曼和光致发光研究明确揭示,ReS₂材料上的拉曼增强源于电荷转移过程而非能量转移过程,并且拉曼增强与ReS₂纳米片的层数(厚度)成反比,而光致发光猝灭效应与层数成正比。在单层ReS₂薄膜上,检测到依赖于激光激发能量的强共振增强拉曼散射效应,并且从诸如罗丹明6G和亚甲基蓝等所研究的染料分子中可达到低至10⁻⁹M的检测限。通过目标分子与基底之间增强的电荷相互作用实现的如此高的增强因子表明,仔细考虑层数依赖性特征和与激发能量相关的共振效应后,ReS₂是用于传感应用的有前景的拉曼增强平台。