Liu Xiao, Jiang Xingxing, Shao Gonglei, Xiang Haiyan, Li Zhiwei, Jin Yuanyuan, Chen Yang, Jiang Huili, Li Huimin, Shui Jianglan, Feng Yexin, Liu Song
Institute of Chemical Biology and Nanomedicine (ICBN), College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China.
Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China.
Small. 2022 Jun;18(22):e2200601. doi: 10.1002/smll.202200601. Epub 2022 May 2.
Point defects of heteroatoms and vacancies can activate the inert basal plane of molybdenum sulfide (MoS ) to improve its performance on catalyzing the hydrogen evolution reaction (HER). However, the synergy between heteroatoms and vacancies is still unclear. Here, a chemical vapor deposition-assisted in situ vanadium (V) doping method is used to synthesize monolayer MoS with abundant and tunable vacancies and V-dopants in the lattice. Ten delicate defect configurations are prepared to provide a complex system for the relationship investigation between microstructure and catalytic performance. The combination of on-chip electrochemical tests and theoretical calculations indicates that the HER performance greatly depends on the type and amount of defect configurations. The optimal configuration is that three V atoms are aggregated and accompanied by abundant sulfur vacancies, in which, H atoms directly interact with Mo and V atoms to form the most stable metal-bridge structure. The on-chip measurements also confirm that the sample with high concentrations of this type of defect configuration exhibits the best catalytic performance, indicating the efficient synergy in the optimal configuration. The revealed effects of defect configurations are expected to inspire the design and regulation of high-efficiency 2D catalysts.
杂原子和空位的点缺陷可以激活硫化钼(MoS )的惰性基面,以提高其催化析氢反应(HER)的性能。然而,杂原子和空位之间的协同作用仍不清楚。在此,采用化学气相沉积辅助原位钒(V)掺杂方法合成了晶格中具有丰富且可调空位和V掺杂剂的单层MoS 。制备了十种精细的缺陷构型,为研究微观结构与催化性能之间的关系提供了一个复杂的体系。芯片上的电化学测试和理论计算相结合表明,HER性能很大程度上取决于缺陷构型的类型和数量。最佳构型是三个V原子聚集并伴有大量硫空位,其中H原子直接与Mo和V原子相互作用形成最稳定的金属桥结构。芯片上的测量还证实,具有高浓度这种类型缺陷构型的样品表现出最佳的催化性能,表明在最佳构型中存在有效的协同作用。所揭示的缺陷构型的影响有望为高效二维催化剂的设计和调控提供启发。