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通过刻面选择性各向异性反应离子刻蚀实现晶体金的光滑侧壁:迈向低损耗等离子体器件

Smooth Sidewalls on Crystalline Gold through Facet-Selective Anisotropic Reactive Ion Etching: Toward Low-Loss Plasmonic Devices.

作者信息

Greenwood Alexander B, Balram Krishna C, Gersen Henkjan

机构信息

Nanophotonics and Nanophysics Group, H. H. Wills Physics Laboratory, University of Bristol, Bristol, BS8 1TL, United Kingdom.

Quantum Engineering Technology Laboratories and Department of Electrical and Electronic Engineering, University of Bristol, Woodland Road, Bristol BS8 1UB, United Kingdom.

出版信息

Nano Lett. 2022 Jun 22;22(12):4617-4621. doi: 10.1021/acs.nanolett.1c04405. Epub 2022 Jun 2.

DOI:10.1021/acs.nanolett.1c04405
PMID:35652540
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9228404/
Abstract

Quantum plasmonics aims to harness the deeply subwavelength confinement provided by plasmonic devices to engineer more efficient interfaces to quantum systems in particular single emitters. Realizing this vision is hampered by the roughness-induced scattering and loss inherent in most nanofabricated devices. In this work, we show evidence of a reactive ion etching process to selectively etch gold along select crystalline facets. Since the etch is facet selective, the sidewalls of fabricated devices are smoother than the lithography induced line-edge roughness with the prospect of achieving atomic smoothness by further optimization of the etch chemistry. This opens up a route toward fabricating integrated plasmonic circuits that can achieve loss metrics close to fundamental bounds.

摘要

量子等离激元学旨在利用等离激元器件提供的深亚波长限制,来设计与量子系统(特别是单个发射器)更高效的界面。实现这一愿景受到大多数纳米制造器件中固有的粗糙度引起的散射和损耗的阻碍。在这项工作中,我们展示了一种反应离子蚀刻工艺的证据,该工艺可沿选定的晶面选择性地蚀刻金。由于蚀刻是晶面选择性的,制造器件的侧壁比光刻引起的线边缘粗糙度更光滑,通过进一步优化蚀刻化学有望实现原子级光滑度。这为制造能够实现接近基本极限的损耗指标的集成等离激元电路开辟了一条途径。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8237/9228404/53a1b471c753/nl1c04405_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8237/9228404/75267bc002cc/nl1c04405_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8237/9228404/73db0d58039f/nl1c04405_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8237/9228404/7de93bfe43e3/nl1c04405_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8237/9228404/5d03bc612e59/nl1c04405_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8237/9228404/53a1b471c753/nl1c04405_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8237/9228404/75267bc002cc/nl1c04405_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8237/9228404/73db0d58039f/nl1c04405_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8237/9228404/7de93bfe43e3/nl1c04405_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8237/9228404/5d03bc612e59/nl1c04405_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8237/9228404/53a1b471c753/nl1c04405_0005.jpg

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