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金在纳米削自组装单层内的电化学腐蚀。

Electrochemical etching of gold within nanoshaved self-assembled monolayers.

机构信息

School of Natural Sciences, University of California, Merced, California 95343, USA.

出版信息

ACS Nano. 2013 Jun 25;7(6):5421-9. doi: 10.1021/nn4014005. Epub 2013 Jun 4.

DOI:10.1021/nn4014005
PMID:23713449
Abstract

Wet etching of metal substrates with patterned self-assembled monolayers (SAMs) is an inexpensive and convenient method to produce metal nanostructures. For this method to be relevant to the fabrication of high precision plasmonic structures, the kinetics of nanoscale etching process, particularly in the lateral direction, must be elucidated and controlled. We herein describe an in situ atomic force microscopy (AFM) study to characterize the etching process within patterned SAMs with nanometer resolution and in real time. The in situ study was enabled by several unique elements, including single crystalline substrates to minimize the variability of facet-dependent etch rate, high-resolution nanoshaved SAM patterns, electrochemical-potential-controlled etching, and AFM kymographs to improve temporal resolution. Our approach has successfully quantified the extent of both lateral etching and vertical etching at different potentials. Our study reveals the presence of an induction period prior to the onset of significant lateral etching, which would be difficult to observe with the limited time resolution and sample-to-sample variation of ex situ studies. By increasing the vertical etch rate during this induction period with higher potentials, gold was etched up to 40 nm in the vertical direction with minimal lateral etching. High-resolution etching was also demonstrated on single crystal gold microplates, which are high quality gold thin films suitable for plasmonics studies.

摘要

采用具有图案化自组装单层(SAM)的金属衬底湿法刻蚀是一种生产金属纳米结构的廉价且方便的方法。为了使该方法与高精度等离子体结构的制造相关,必须阐明和控制纳米级刻蚀过程的动力学,特别是在横向方向上。本文描述了一种原位原子力显微镜(AFM)研究,以纳米级分辨率和实时方式对图案化 SAM 内的刻蚀过程进行表征。该原位研究得益于几个独特的元素,包括单晶衬底,以最小化各向异性刻蚀速率的可变性、高分辨率纳米级 SAM 图案、电化学势控制的刻蚀以及 AFM 轨迹图以提高时间分辨率。我们的方法成功地量化了不同电势下横向和垂直刻蚀的程度。我们的研究揭示了在显著横向刻蚀开始之前存在诱导期,这在具有有限时间分辨率和样品间差异的原位研究中很难观察到。通过在这个诱导期内通过提高电势来增加垂直刻蚀速率,金在垂直方向上被刻蚀了 40nm,而横向刻蚀最小。在单晶金微板上也进行了高分辨率刻蚀,单晶金微板是适合等离子体研究的高质量金薄膜。

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