Kaur Damanpreet, Physics Rakhi, Vashishtha Pargam, Gupta Govind, Sarkar Subhendu, Kumar Mukesh
Department of Physics, Indian Institute of Technology, 206, Academic Block, Rupnagar, 140001, INDIA.
Physics, Indian Institute of Technology Ropar, SMAL Lab, IIT Ropar, Rupnagar, Punjab, 140001, INDIA.
Nanotechnology. 2022 Jun 8. doi: 10.1088/1361-6528/ac76d3.
Gallium oxide is an ultra-wide band gap semiconductor (Eg > 4.4 eV), best suited intrinsically for the fabrication of solar-blind photodetectors. Apart from its crystalline phases, amorphous Ga2O3 based solar-blind photodetector offer simple and facile growth without the hassle of lattice matching and high temperatures for growth and annealing. However, they often suffer from long response times which hinders any practical use. Herein, we report a simple and cost-effective method to enhance the device performance of amorphous gallium oxide thin film photodetector by nanopatterning the surface using a broad and low energy Ar+ ion beam. The ripples formed on the surface of gallium oxide thin film lead to the formation of anisotropic conduction channels along with an increase in the surface defects. The defects introduced in the system act as recombination centers for the charge carriers bringing about a reduction in the decay time of the devices, even at zero-bias. The fall time of the rippled devices, therefore, reduces, making the devices faster by more than 15 times. This approach of surface modification of gallium oxide provides a one-step, low cost method to enhance the device performance of amorphous thin films which can help in the realization of next-generation optoelectronics.
氧化镓是一种超宽带隙半导体（Eg > 4.4 eV），本质上最适合用于制造日盲型光电探测器。除了其晶相之外，基于非晶Ga2O3的日盲型光电探测器生长简单便捷，无需晶格匹配的麻烦以及生长和退火所需的高温。然而，它们常常存在响应时间长的问题，这阻碍了其实际应用。在此，我们报告一种简单且经济高效的方法，通过使用宽束低能Ar+离子束对表面进行纳米图案化处理，来提高非晶氧化镓薄膜光电探测器的器件性能。氧化镓薄膜表面形成的波纹导致各向异性传导通道的形成以及表面缺陷的增加。系统中引入的缺陷充当电荷载流子的复合中心，即使在零偏压下也能使器件的衰减时间缩短。因此，有波纹器件的下降时间缩短，使器件速度提高超过15倍。这种氧化镓表面改性方法提供了一种一步式、低成本的方法来提高非晶薄膜的器件性能，这有助于实现下一代光电子学。
