Kaur Damanpreet, Posti Raghvendra, Singh Jaspreet, Roy Debangsu, Sarkar Subhendu, Kumar Mukesh
Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab, 140001, India.
Surface Modification and Application Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab, 140001, India.
Small. 2024 Aug;20(35):e2309277. doi: 10.1002/smll.202309277. Epub 2024 Apr 15.
GaO has emerged as a promising material for the wide-bandgap industry aiming at devices beyond the limits of conventional silicon. Amorphous GaO is widely being used for flexible electronics, but suffers from very high resistivity. Conventional methods of doping like ion implantation require high temperatures post-processing, thereby limiting their use. Herein, an unconventional method of doping GaO films with Si, thereby enhancing its electrical properties, is reported. Ion-beam sputtering (500 eV Ar) is utilized to nanopattern SiO-coated Si substrate leaving the topmost part rich in elemental Si. This helps in enhancing the carrier conduction by increasing n-type doping of the subsequently coated 5 nm amorphous GaO films, corroborated by room-temperature resistivity measurement and valence band spectra, respectively, while the nanopatterns formed help in better light management. Finally, as proof of concept, metal-semiconductor-metal (MSM) photoconductor devices fabricated on doped, rippled films show superior properties with responsivity increasing from 6 to 433 mA W while having fast detection speeds of 861 µs/710 µs (rise/fall time) as opposed to non-rippled devices (377 ms/392 ms). The results demonstrate a facile, cost-effective, and large-area method to dope amorphous GaO films in a bottom-up approach which may be employed for increasing the electrical conductivity of other amorphous oxide semiconductors as well.
对于旨在制造超越传统硅极限器件的宽带隙产业而言，氧化镓已成为一种颇具前景的材料。非晶态氧化镓广泛应用于柔性电子领域，但其电阻率极高。诸如离子注入等传统掺杂方法需要高温后处理，从而限制了它们的应用。在此，报道了一种用硅掺杂氧化镓薄膜的非常规方法，以此增强其电学性能。利用离子束溅射（500 eV氩离子）对涂覆有二氧化硅的硅衬底进行纳米图案化处理，使最顶层富含元素硅。这有助于通过增加随后涂覆的5纳米非晶态氧化镓薄膜的n型掺杂来增强载流子传导，分别通过室温电阻率测量和价带光谱得到证实，同时形成的纳米图案有助于更好地进行光管理。最后，作为概念验证，在掺杂的波纹状薄膜上制造的金属 - 半导体 - 金属（MSM）光电导器件显示出优异的性能，响应度从6 mA/W提高到433 mA/W，而检测速度快，上升/下降时间为861 μs/710 μs，相比之下，非波纹状器件的上升/下降时间为377 ms/392 ms。结果表明了一种简便、经济高效且大面积的自下而上掺杂非晶态氧化镓薄膜的方法，该方法也可用于提高其他非晶氧化物半导体的电导率。
