Chen Xing, Liu Kewei, Zhang Zhenzhong, Wang Chunrui, Li Binghui, Zhao Haifeng, Zhao Dongxu, Shen Dezhen
State Key Laboratory of Luminescence and Applications and ‡State Key Laboratory of Laser Interaction with Matter, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , 3888 Dongnanhu Road, Changchun 130033, PR China.
ACS Appl Mater Interfaces. 2016 Feb 17;8(6):4185-91. doi: 10.1021/acsami.5b11956. Epub 2016 Feb 5.
Because of the direct band gap of 4.9 eV, β-Ga2O3 has been considered as an ideal material for solar-blind photodetection without any bandgap tuning. Practical applications of the photodetectors require fast response speed, high signal-to-noise ratio, low energy consumption and low fabrication cost. Unfortunately, most reported β-Ga2O3-based photodetectors usually possess a relatively long response time. In addition, the β-Ga2O3 photodetectors based on bulk, the individual 1D nanostructure, and the film often suffer from the high cost, the low repeatability, and the relatively large dark current, respectively. In this paper, a Au/β-Ga2O3 nanowires array film vertical Schottky photodiode is successfully fabricated by a simple thermal partial oxidation process. The device exhibits a very low dark current of 10 pA at -30 V with a sharp cutoff at 270 nm. More interestingly, the 90-10% decay time of our device is only around 64 μs, which is much quicker than any other previously reported β-Ga2O3-based photodetectors. Besides, the self-powering, the excellent stability and the good reproducibility of Au/β-Ga2O3 nanowires array film photodetector are helpful to its commercialization and practical applications.
由于β-Ga2O3具有4.9 eV的直接带隙，它被认为是一种无需任何带隙调谐的日盲光电探测理想材料。光电探测器的实际应用需要快速响应速度、高信噪比、低能耗和低制造成本。不幸的是，大多数报道的基于β-Ga2O3的光电探测器通常具有相对较长的响应时间。此外，基于体材料、单个一维纳米结构和薄膜的β-Ga2O3光电探测器分别经常面临高成本、低重复性和相对较大的暗电流问题。在本文中，通过简单的热部分氧化工艺成功制备了一种Au/β-Ga2O3纳米线阵列薄膜垂直肖特基光电二极管。该器件在-30 V时表现出非常低的10 pA暗电流，在270 nm处有一个sharp截止。更有趣的是，我们器件的90-10%衰减时间仅约为64 μs，这比之前报道的任何其他基于β-Ga2O3的光电探测器都要快得多。此外，Au/β-Ga2O3纳米线阵列薄膜光电探测器的自供电、优异稳定性和良好再现性有助于其商业化和实际应用。
