Svintsov Alexander A, Knyazev Maxim A, Zaitsev Sergey I
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, St. Academician Osipyan, 6, 142432 Moscow, Russia.
Materials (Basel). 2022 May 30;15(11):3888. doi: 10.3390/ma15113888.
The paper presents a program for simulating electron scattering in layered materials . Calculations show that the absorbed energy density is three-dimensional, while the contribution of the forward-scattered electrons is better described by a power function rather than the commonly used Gaussian. It is shown that for the practical correction of the proximity effect, it is possible, nevertheless, to use the classical two-dimensional proximity function containing three parameters: α, β, η. A method for determining the parameters α, β, η from three-dimensional calculations based on MC simulation and development consideration is proposed. A good agreement of the obtained parameters and experimental data for various substrates and electron energies is shown. Thus, a method for calculating the parameters of the classical proximity function for arbitrary layered substrates based on the Monte Carlo simulation has been developed.