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光子局域态密度的工程设计:共振及高折射率介电纳米物体附近自发辐射的强烈抑制

Engineering of the Photon Local Density of States: Strong Inhibition of Spontaneous Emission near the Resonant and High-Refractive Index Dielectric Nano-objects.

作者信息

Muravitskaya Alina, Movsesyan Artur, Guzatov Dmitry V, Baudrion Anne-Laure, Adam Pierre-Michel, Gaponenko Sergey V, Vincent Remi

机构信息

B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimosti Avenue, Minsk 220072, Belarus.

Light, Nanomaterials & Nanotechnologies (L2n), CNRS EMR 7004, Université de Technologie de Troyes, 12 Rue Marie Curie, Troyes Cedex 10004, France.

出版信息

J Phys Chem C Nanomater Interfaces. 2022 Mar 31;126(12):5691-5700. doi: 10.1021/acs.jpcc.1c09844. Epub 2022 Mar 16.

Abstract

Metallic or dielectric nano-objects change the photon local density of states of closely placed emitters, particularly when plasmon or Mie resonances are present. Depending on the shape and material of these nano-objects, they may induce either a decrease or an increase in decay rates of the excited states of the emitter. In this work, we consider the reduction of the probability of optical transitions in emitters near high-refractive index dielectric (silicon and zinc selenide) nanoparticles. We tune the spectral positions of magnetic and electric modes of nanocylinders to obtain the largest overlap of the valleys in the total decay rate spectra for differently oriented dipoles and, in this way, find the highest inhibition of about 80% for randomly oriented emitters. The spectral positions of these valleys are easy to control since the wavelengths of the modes depend on the height and diameter of nanocylinders. The inhibition value is robust to the distance between the emitter and the nanoparticle in the range of nearly 50 nm, which is crucially important for the applications, such as selective optical transition engineering and photovoltaics.

摘要

金属或电介质纳米物体可改变紧密放置的发射体的光子局域态密度,尤其是当存在等离子体或米氏共振时。根据这些纳米物体的形状和材料,它们可能会导致发射体激发态的衰减率降低或增加。在这项工作中,我们考虑了高折射率电介质(硅和硒化锌)纳米颗粒附近发射体中光学跃迁概率的降低。我们调整纳米圆柱体的磁模式和电模式的光谱位置,以获得不同取向偶极子在总衰减率光谱中谷值的最大重叠,从而发现对于随机取向的发射体,最高抑制率约为80%。这些谷值的光谱位置易于控制,因为模式的波长取决于纳米圆柱体的高度和直径。在近50纳米的范围内,抑制值对于发射体与纳米颗粒之间的距离具有鲁棒性,这对于诸如选择性光学跃迁工程和光伏等应用至关重要。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f922/9173691/04a128c5ca7f/jp1c09844_0002.jpg

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