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Thermal Quenching Mechanism of Metal-Metal Charge Transfer State Transition Luminescence Based on Double-Band-Gap Modulation.

作者信息

Ma Qincan, Zhang Qiang, Yang Mei, Shao Baiqi, Ouyang Ruizhuo, Guo Ning

机构信息

Department of Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, P. R. China.

Department of Physics, University of Shanghai for Science and Technology, Shanghai 200093, P. R. China.

出版信息

Inorg Chem. 2022 Jun 27;61(25):9823-9831. doi: 10.1021/acs.inorgchem.2c01386. Epub 2022 Jun 14.

DOI:10.1021/acs.inorgchem.2c01386
PMID:35700348
Abstract

Bi-related metal-to-metal charge transfer (MMCT) transition phosphors are expected to become a new class of solid-state luminescent materials due to their unique broadband long-wavelength emission; however, the main obstacle to their application is the thermal quenching effect. In this study, one novel thermal quenching mechanism of Bi-MMCT transition luminescence is proposed by introducing electron-transfer potential energy (Δ). YVPO:0.01Bi (YVPO:Bi) is used as the model; when the band gap of the activator Bi increases from 3.44 to 3.76 eV and the band gap of the host YVPO widens from 2.75 to 3.16 eV, the electron-transfer potential energy (Δ) decreases and the thermal quenching activation energy (Δ) increases, which result in the relative emission intensity increasing from 0.06 to 0.64 at 303-523 K. Guided by density functional calculations, the thermal quenching mechanism of the Bi-MMCT state transition luminescence is revealed by the double-band-gap modulation model of the activator ion and the matrix. This study improves the thermal quenching theory of different types of Bi transition luminescence and offers one neo-theory guidance for the contriving and researching of high-quality luminescence materials.

摘要

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