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喷雾干燥羟基磷灰石基超粒子,具有均匀可控的粒径和形态。

Spray dried hydroxyapatite-based supraparticles with uniform and controllable size and morphology.

机构信息

Engineering Research Centre of Advanced Powder Technology (ERCAPT), School of Chemical and Environmental Engineering, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, Jiangsu 215123, PR China.

Engineering Research Centre of Advanced Powder Technology (ERCAPT), School of Chemical and Environmental Engineering, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, Jiangsu 215123, PR China.

出版信息

Colloids Surf B Biointerfaces. 2022 Sep;217:112610. doi: 10.1016/j.colsurfb.2022.112610. Epub 2022 Jun 3.

Abstract

This work aims to prepare uniform spray dried hydroxyapatite-based (SD HAP-based) supraparticles with controllable morphology via micro-fluidic spray drying. Sodium polyacrylate (PAAS) and sodium chloride (NaCl) were used to prepare the precursor suspensions by regulating the inter-particle repulsive forces and electrostatic shielding effect, respectively. The particle size (D50) and zeta potential of the suspension were highly associated with the mass ratio of HAP to PAAS (m/m) and the NaCl concentration (C), which further had significant effect on the permeability (k) of the droplet shell formed during spray drying and ultimately the supraparticle morphology. D50 ˂ 2 µm and absolute zeta potential ˃ 20 mV, obtained when m/m ˂ 100 under low C, rendered ultralow k and consequently deformed supraparticles; Whereas D50 ˃ 2 µm and absolute zeta potential ˂ 20 mV, achieved by decreasing PAAS amount, i.e. m/m ≥ 100 or improving C to efficiently screen surface net charge of HAP, high k and spherical supraparticles were thus preferentially formed.

摘要

这项工作旨在通过微流喷射干燥法制备具有可控形态的均匀羟基磷灰石基(SD HAP 基)超粒子。通过调节颗粒间的斥力和静电屏蔽效应,分别使用聚丙烯酸钠(PAAS)和氯化钠(NaCl)来制备前驱体悬浮液。悬浮液的粒径(D50)和zeta 电位与 HAP 与 PAAS 的质量比(m/m)和 NaCl 浓度(C)密切相关,这进一步对喷雾干燥过程中形成的液滴壳的渗透性(k)产生显著影响,并最终影响超粒子的形态。当 m/m 小于 100 且 C 较低时,D50 ˂ 2 µm 且绝对 zeta 电位 ˃ 20 mV,导致超低 k 值,从而使超粒子变形;而当通过减少 PAAS 的量,即 m/m ≥ 100 或提高 C 以有效屏蔽 HAP 的表面净电荷时,D50 ˃ 2 µm 且绝对 zeta 电位 ˂ 20 mV,高 k 值和球形超粒子则优先形成。

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