Jo Seo-Hyeon, Lee Sung-Gap, Lee Young-Hie
Department of Ceramic Engineering, Engineering Research Institute, Gyeongsang National University, Jinju-Si, 660-701, South Korea.
Nanoscale Res Lett. 2012 Jan 5;7(1):54. doi: 10.1186/1556-276X-7-54.
In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.
在本研究中，采用旋涂法，在Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100)衬底上，交替使用BFO和PZT金属醇盐溶液制备了Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO]多层薄膜。涂层和加热过程重复多次以形成多层薄膜。所有PZT/BFO多层薄膜均呈现无空隙、均匀的晶粒结构，不存在玫瑰花结结构。六层涂层的PZT/BFO [PZT/BFO-6]薄膜的相对介电常数和介电损耗分别约为405和0.03%。随着涂层数量的增加，剩余极化强度和矫顽场增大。BFO-6多层薄膜的值分别为41.3 C/cm2和15.1 MV/cm。BFO-6多层薄膜在5 V时的漏电流密度为2.52×10-7 A/cm2。
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