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人工自旋冰中缺陷诱导的单极子注入与操控。

Defect-induced monopole injection and manipulation in artificial spin ice.

作者信息

Puttock Robert, Andersen Ingrid M, Gatel Christophe, Park Bumsu, Rosamond Mark C, Snoeck Etienne, Kazakova Olga

机构信息

Quantum Materials and Sensors, National Physical Laboratory, Teddington, UK.

Centre d'Elaboration de Materiaux et d'Etudes Structurales, Toulouse, France.

出版信息

Nat Commun. 2022 Jun 25;13(1):3641. doi: 10.1038/s41467-022-31309-0.

Abstract

Lithographically defined arrays of nanomagnets are well placed for application in areas such as probabilistic computing or reconfigurable magnonics due to their emergent collective dynamics and writable magnetic order. Among them are artificial spin ice (ASI), which are arrays of binary in-plane macrospins exhibiting geometric frustration at the vertex interfaces. Macrospin flips in the arrays create topologically protected magnetic charges, or emergent monopoles, which are bound to an antimonopole to conserve charge. In the absence of controllable pinning, it is difficult to manipulate individual monopoles in the array without also influencing other monopole excitations or the counter-monopole charge. Here, we tailor the local magnetic order of a classic ASI lattice by introducing a ferromagnetic defect with shape anisotropy into the array. This creates monopole injection sites at nucleation fields below the critical lattice switching field. Once formed, the high energy monopoles are fixed to the defect site and may controllably propagate through the lattice under stimulation. Defect programing of bound monopoles within the array allows fine control of the pathways of inverted macrospins. Such control is a necessary prerequisite for the realization of functional devices, e. g. reconfigurable waveguide in nanomagnonic applications.

摘要

由于其涌现的集体动力学和可写磁序,光刻定义的纳米磁体阵列非常适合应用于概率计算或可重构磁子学等领域。其中包括人工自旋冰(ASI),它是由平面内二元宏观自旋组成的阵列,在顶点界面处表现出几何阻挫。阵列中的宏观自旋翻转会产生拓扑保护的磁荷,即涌现的单极子,它与一个反单极子结合以守恒电荷。在没有可控钉扎的情况下,在不影响其他单极子激发或反单极子电荷的情况下,很难操纵阵列中的单个单极子。在这里,我们通过在阵列中引入具有形状各向异性的铁磁缺陷来定制经典ASI晶格的局部磁序。这在低于临界晶格切换场的成核场处创建了单极子注入位点。一旦形成,高能单极子就会固定在缺陷位点上,并在刺激下可控地穿过晶格传播。对阵列中束缚单极子的缺陷编程允许对反转宏观自旋的路径进行精细控制。这种控制是实现功能器件(例如纳米磁子学应用中的可重构波导)的必要前提。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1812/9233697/1db0d1a3f96e/41467_2022_31309_Fig1_HTML.jpg

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