Tosoni Sergio, Pacchioni Gianfranco
Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via Roberto Cozzi 55, 20125 Milan, Italy.
Phys Chem Chem Phys. 2022 Jul 6;24(26):15891-15903. doi: 10.1039/d2cp01224c.
The magnetic ground state and the hyperfine coupling parameters of some first-row transition metal (TM) atoms (Ti, Cr, Mn, Fe, Co, and Ni) adsorbed on ultrathin insulating oxide films are studied by means of DFT calculations. The results obtained using GGA, screened hybrid, and GGA+ functionals are compared for TMs adsorbed on free-standing MgO(100). Then, the case of adsorption on MgO mono- and bilayers supported on Ag(100) is studied using GGA+. Along with the problematic aspects inherent to the calculation of hyperfine coupling constants, a critical dependence on the magnetic state and electron configuration of the TM is reported, which implies a real challenge for the state-of-the-art DFT methods. In the cases where all functionals considered provide a coherent magnetic and electron configuration, however, the calculated hyperfine parameters do not depend significantly on the choice of the functional. In this respect, the role of the metal support in the hyperfine coupling constants is highly system-dependent and becomes crucial in all cases where the support modifies the oxidation state of the adatom, induces a change in the bonding site or simply induces a rearrangement of the orbital energy diagram. This has important implications for the modelling of single TM atoms deposited on insulating ultrathin films supported on metals for application in quantum technologies or as memory devices.
通过密度泛函理论(DFT)计算研究了吸附在超薄绝缘氧化物薄膜上的一些第一行过渡金属(TM)原子(Ti、Cr、Mn、Fe、Co和Ni)的磁性基态和超精细耦合参数。比较了使用广义梯度近似(GGA)、筛选杂化和GGA+泛函对吸附在独立MgO(100)上的TMs得到的结果。然后,使用GGA+研究了吸附在Ag(100)支撑的MgO单层和双层上的情况。除了超精细耦合常数计算中固有的问题外,还报告了对TM的磁态和电子构型的关键依赖性,这对当前的DFT方法构成了真正的挑战。然而,在所有考虑的泛函都提供一致的磁态和电子构型的情况下,计算得到的超精细参数对泛函的选择并不显著依赖。在这方面,金属载体在超精细耦合常数中的作用高度依赖于体系,并且在载体改变吸附原子的氧化态、引起键合位点变化或仅仅引起轨道能量图重排的所有情况下都变得至关重要。这对于沉积在金属支撑的绝缘超薄膜上的单个TM原子的建模具有重要意义,这些原子可应用于量子技术或作为存储器件。