Bao Chunxiong, Gao Feng
Department of Physics, Chemistry, and Biology, Linköping University, Sweden.
National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, People's Republic of China.
Rep Prog Phys. 2022 Aug 18;85(9). doi: 10.1088/1361-6633/ac7c7a.
Metal halide perovskites are widely used in optoelectronic devices, including solar cells, photodetectors, and light-emitting diodes. Defects in this class of low-temperature solution-processed semiconductors play significant roles in the optoelectronic properties and performance of devices based on these semiconductors. Investigating the defect properties provides not only insight into the origin of the outstanding performance of perovskite optoelectronic devices but also guidance for further improvement of performance. Defects in perovskites have been intensely studied. Here, we review the progress in defect-related physics and techniques for perovskites. We survey the theoretical and computational results of the origin and properties of defects in perovskites. The underlying mechanisms, functions, advantages, and limitations of trap state characterization techniques are discussed. We introduce the effect of defects on the performance of perovskite optoelectronic devices, followed by a discussion of the mechanism of defect treatment. Finally, we summarize and present key challenges and opportunities of defects and their role in the further development of perovskite optoelectronic devices.
金属卤化物钙钛矿被广泛应用于光电器件中，包括太阳能电池、光电探测器和发光二极管。这类通过低温溶液法制备的半导体中的缺陷，在基于这些半导体的光电器件的光电特性和性能中起着重要作用。研究缺陷特性不仅有助于深入了解钙钛矿光电器件优异性能的起源，还能为性能的进一步提升提供指导。钙钛矿中的缺陷已得到深入研究。在此，我们综述了钙钛矿中与缺陷相关的物理和技术进展。我们调查了钙钛矿中缺陷起源和性质的理论及计算结果。讨论了陷阱态表征技术的潜在机制、功能、优点和局限性。我们介绍了缺陷对钙钛矿光电器件性能的影响，随后讨论了缺陷处理的机制。最后，我们总结并呈现了缺陷的关键挑战和机遇，以及它们在钙钛矿光电器件进一步发展中的作用。
