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同时具有高电致发光不对称性和高外量子效率的钙钛矿自旋发光二极管。

Perovskite spin light-emitting diodes with simultaneously high electroluminescence dissymmetry and high external quantum efficiency.

作者信息

He Shuai, Lin Weixi, Yu De, Shi Junwei, Yin Zhen, Sun Changjiu, Liu Haoliang, Zhang Chen, Yuan Jianyu, Bai Sai, Xiao Shumin, Long Guankui, Yuan Mingjian, Jiang Yuanzhi, Chen Yimu, Song Qinghai

机构信息

School of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Guangdong, China.

Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Guangdong, China.

出版信息

Nat Commun. 2025 Mar 5;16(1):2201. doi: 10.1038/s41467-025-57472-8.

Abstract

Realizing high electroluminescence dissymmetric factor and high external quantum efficiency at the same time is challenging in light-emitting diodes with direct circularly polarized emission. Here, we show that high electroluminescence dissymmetric factor and high external quantum efficiency can be simultaneously achieved in light-emitting diodes based on chiral perovskite quantum dots. Specifically, chiral perovskite quantum dots with chiral-induced spin selectivity can concurrently serve as localized radiative recombination centers of spin-polarized carriers for circularly polarized emission, thereby suppressing the relaxation of spins, Meanwhile, improving the chiral ligand exchange efficiency is found to synergistically promote their spin selectivity and optoelectronic properties so that chiroptoelectronic performance of resulting devices can be facilitated. Our device simultaneously exhibits high electroluminescence dissymmetric factor (R: 0.285 and S: 0.251) and high external quantum efficiency (R: 16.8% and S: 16%), demonstrating their potential in constructing high-performance chiral light sources.

摘要

在具有直接圆偏振发射的发光二极管中,同时实现高电致发光不对称因子和高外量子效率具有挑战性。在此,我们表明基于手性钙钛矿量子点的发光二极管可以同时实现高电致发光不对称因子和高外量子效率。具体而言,具有手性诱导自旋选择性的手性钙钛矿量子点可以同时作为自旋极化载流子的局域辐射复合中心用于圆偏振发射,从而抑制自旋弛豫。同时,发现提高手性配体交换效率可协同促进其自旋选择性和光电性能,从而有助于所得器件的手性光电子性能。我们的器件同时展现出高电致发光不对称因子(R:0.285和S:0.251)和高外量子效率(R:16.8%和S:16%),证明了它们在构建高性能手性光源方面的潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/734e/11880525/8f1e107c5679/41467_2025_57472_Fig1_HTML.jpg

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