Simultaneous achieving negative photoconductivity response and volatile resistive switching in CsCoCl single crystals towards artificial optoelectronic synapse.

The development of negative photoconductivity (NPC)-related devices is of great significance for numerous applications, such as optoelectronic detection, neuromorphic computing, and optoelectronic synapses. Here, an unusual but interesting NPC phenomenon in the novel cesium cobalt chlorine (CsCoCl) single crystal-based optoelectronic devices is reported, which simultaneously possess volatile resistive switching (RS) memory behavior. Joint experiment-theory characterizations reveal that the NPC behavior is derived from the intrinsic vacancy defects of CsCoCl, which could trap photogenerated charge carriers and produce an internal electric field opposite to the applied electric field. Such NPC effect enables an abnormal photodetection performance with a decrease in electrical conductivity to illumination. Also, a large specific detectivity of 2.7 × 10 Jones and broadband NPC detection wavelength from 265 to 780 nm were achieved. In addition to the NPC response, the resulting devices demonstrate a volatile RS performance with a record-low electric field of 5 × 10V m. By integrating the characteristics of electric-pulse enhancement from RS and light-pulse depression from NPC, an artificial optoelectronic synapse was successfully demonstrated, and based on the simulation of artificial neural network algorithm, the recognition application of handwritten digital images was realized. These pioneer findings are anticipated to contribute significantly to the practical advancement of metal halides in the fields of in-memory technologies and artificial intelligence.