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用于在激光尾场加速中使电子注入与激光演化解耦的纳米粒子插入方案。

Nanoparticle-insertion scheme to decouple electron injection from laser evolution in laser wakefield acceleration.

作者信息

Xu Jiancai, Bae Leejin, Ezzat Mohamed, Kim Hyung Taek, Yang Jeong Moon, Lee Sang Hwa, Yoon Jin Woo, Sung Jae Hee, Lee Seong Ku, Ji Liangliang, Shen Baifei, Nam Chang Hee

机构信息

State Key Laboratory of High Field Laser Physics, CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences(CAS), Shanghai, 201800, China.

Center for Relativistic Laser Science (CoReLS), Institute for Basic Science, Gwangju, 61005, Republic of Korea.

出版信息

Sci Rep. 2022 Jul 1;12(1):11128. doi: 10.1038/s41598-022-15125-6.

Abstract

A localized nanoparticle insertion scheme is developed to decouple electron injection from laser evolution in laser wakefield acceleration. Here we report the experimental realization of a controllable electron injection by the nanoparticle insertion method into a plasma medium, where the injection position is localized within the short range of 100 μm. Nanoparticles were generated by the laser ablation process of a copper blade target using a 3-ns 532-nm laser pulse with fluence above 100 J/cm. The produced electron bunches with a beam charge above 300 pC and divergence of around 12 mrad show the injection probability over 90% after optimizing the ablation laser energy and the temporal delay between the ablation and the main laser pulses. Since this nanoparticle insertion method can avoid the disturbing effects of electron injection process on laser evolution, the stable high-charge injection method can provide a suitable electron injector for multi-GeV electron sources from low-density plasmas.

摘要

一种局域纳米颗粒插入方案被开发出来,用于在激光尾场加速中使电子注入与激光演化解耦。在此,我们报告了通过纳米颗粒插入方法在等离子体介质中实现可控电子注入的实验,其中注入位置被局域在100μm的短范围内。纳米颗粒由铜片靶的激光烧蚀过程产生,使用的是脉宽3ns、波长532nm、能量密度高于100J/cm²的激光脉冲。在优化烧蚀激光能量以及烧蚀脉冲与主激光脉冲之间的时间延迟后,产生的电子束电荷量超过300pC且发散角约为12mrad,其注入概率超过90%。由于这种纳米颗粒插入方法可以避免电子注入过程对激光演化的干扰效应,这种稳定的高电荷注入方法可为来自低密度等离子体的多GeV电子源提供合适的电子注入器。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/af73/9249746/d85e850e42d1/41598_2022_15125_Fig1_HTML.jpg

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