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含咔唑聚合物辅助陷阱钝化和空穴注入促进用于高效稳定的基于CsCuI的黄色发光二极管

Carbazole-Containing Polymer-Assisted Trap Passivation and Hole-Injection Promotion for Efficient and Stable CsCu I -Based Yellow LEDs.

作者信息

Ma Zhuangzhuang, Ji Xinzhen, Wang Meng, Zhang Fei, Liu Zibin, Yang Dongwen, Jia Mochen, Chen Xu, Wu Di, Zhang Yu, Li Xinjian, Shi Zhifeng, Shan Chongxin

机构信息

Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China.

State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun, 130012, China.

出版信息

Adv Sci (Weinh). 2022 Sep;9(27):e2202408. doi: 10.1002/advs.202202408. Epub 2022 Jul 3.

Abstract

Perovskite light-emitting diodes (LEDs) are emerging light sources for next-generation lighting and display technologies; however, their development is greatly plagued by difficulty in achieving yellow electroluminescence, environmental instability, and lead toxicity. Copper halide CsCu I with intrinsic yellow emission emerges as a highly promising candidate for eco-friendly LEDs, but the electroluminescent performance is limited by defect-related nonradiative losses and inefficient charge transport/injection. To solve these issues, a hole-transporting poly(9-vinlycarbazole) (PVK)-incorporated engineering into CsCu I emitter is proposed. PVK with carbazole groups is permeated at the grain boundaries of CsCu I films by interacting with the uncoordinated Cu , reducing the Cu and Cu antisite defects to increase the radiative recombination and enhancing the hole mobility to balance the charge transport/injection, resulting in substantially enhanced device performances. Eventually, the yellow LEDs exhibit an 8.5-fold enhancement of external quantum efficiency, and the half-lifetime reaches 14.6 h, representing the most stable yellow LEDs based on perovskite systems reported so far.

摘要

钙钛矿发光二极管(LED)是用于下一代照明和显示技术的新兴光源;然而,它们的发展受到实现黄色电致发光的困难、环境不稳定性和铅毒性的严重困扰。具有本征黄色发射的卤化铜CsCuI成为环保型LED极具潜力的候选材料,但电致发光性能受到与缺陷相关的非辐射损失以及低效的电荷传输/注入的限制。为了解决这些问题,提出了一种将空穴传输聚合物聚(9-乙烯基咔唑)(PVK)引入CsCuI发射体的工程方法。含咔唑基团的PVK通过与未配位的Cu相互作用渗透到CsCuI薄膜的晶界处,减少Cu和Cu反位缺陷以增加辐射复合,并提高空穴迁移率以平衡电荷传输/注入,从而显著提高器件性能。最终,黄色LED的外量子效率提高了8.5倍,半衰期达到14.6小时,代表了迄今为止报道的基于钙钛矿体系最稳定的黄色LED。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fedb/9507358/159a6fb23c8e/ADVS-9-2202408-g002.jpg

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