Lin Zewen, Lin Zhenxu, Guo Yanqing, Wu Haixia, Song Jie, Zhang Yi, Zhang Wenxing, Li Hongliang, Hou Dejian, Huang Rui
School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China.
National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Nanomaterials (Basel). 2023 Mar 30;13(7):1228. doi: 10.3390/nano13071228.
The effect of a-SiCN:H encapsulation layers, which are prepared using the very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique with SiH, CH, and NH as the precursors, on the stability and photoluminescence of CsPbBr quantum dots (QDs) were investigated in this study. The results show that a-SiCxNy:H encapsulation layers containing a high N content of approximately 50% cause severe PL degradation of CsPbBr QDs. However, by reducing the N content in the a-SiCxNy:H layer, the PL degradation of CsPbBr QDs can be significantly minimized. As the N content decreases from around 50% to 26%, the dominant phase in the a-SiCxNy:H layer changes from SiNx to SiCxNy. This transition preserves the inherent PL characteristics of CsPbBr QDs, while also providing them with long-term stability when exposed to air, high temperatures (205 °C), and UV illumination for over 600 days. This method provided an effective and practical approach to enhance the stability and PL characteristics of CsPbBr QD thin films, thus holding potential for future developments in optoelectronic devices.
本研究考察了采用甚高频等离子体增强化学气相沉积（VHF-PECVD）技术，以SiH、CH和NH作为前驱体制备的非晶硅碳氮氢（a-SiCN:H）封装层对CsPbBr量子点（QDs）稳定性和光致发光的影响。结果表明，氮含量约为50%的a-SiCxNy:H封装层会导致CsPbBr量子点的光致发光严重退化。然而，通过降低a-SiCxNy:H层中的氮含量，CsPbBr量子点的光致发光退化可显著最小化。随着氮含量从约50%降至26%，a-SiCxNy:H层中的主导相从SiNx转变为SiCxNy。这种转变保留了CsPbBr量子点固有的光致发光特性，同时在暴露于空气、高温（205℃）和紫外线照射超过600天时，还为它们提供了长期稳定性。该方法为增强CsPbBr量子点薄膜的稳定性和光致发光特性提供了一种有效且实用的途径，因此在光电器件的未来发展中具有潜力。
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