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自我刺激的脑干基质不应期的行为学测定

Behavioral determination of refractory periods of the brainstem substrates of self-stimulation.

作者信息

Rompré P P, Miliaressis E

出版信息

Behav Brain Res. 1987 Mar;23(3):205-19. doi: 10.1016/0166-4328(87)90021-0.

DOI:10.1016/0166-4328(87)90021-0
PMID:3580107
Abstract

The objective of this study was to estimate the refractory periods of the brainstem neurons responsible for self-stimulation behavior in the rat. In a first experiment, we tested the robustness of the double pulse technique used to estimate the refractory periods of reward-relevant neurons. We obtained estimates of the relative T-pulse effectiveness at a wide range of stimulation frequencies. The results of this experiment suggest that the refractory period estimates obtained with the behavioral version of the double pulse technique are not dependent on the arbitrary choice of the stimulation frequency. However, the use of stimulation frequencies higher than 100 Hz should preferably be avoided. In a second experiment, we applied the double pulse technique using C-pulse intensity higher than T-pulse intensity to estimate the refractory periods of the brainstem reward-relevant neurons. Using moveable electrodes, we tested 9 metencephalic and 7 mesencephalic sites in 4 animals. In the metencephalon, the most excitable reward-relevant neurons have absolute refractory periods of less than 0.6 and 0.8 ms and have a supernormal period that occurs at least between 5 and 10 ms after the initial excitation. The mesencephalic reward-relevant neurons were found to have more heterogeneous physiological characteristics. The most excitable cells in the mesencephalon have absolute refractory periods of less than 0.4 ms and have a supernormal period occurring as soon as 2.4 ms after the initial excitation. At some mesencephalic sites, we observed first an abrupt initial recovery followed by a plateau, followed by a renewed and continuous recovery, a pattern that was never observed in the metencephalon. The hypothesis of the contribution of two distinct sub-populations of reward-relevant neurons is proposed and the implication of monoaminergic pathways in reward is discussed.

摘要

本研究的目的是估计负责大鼠自我刺激行为的脑干神经元的不应期。在第一个实验中,我们测试了用于估计与奖励相关神经元不应期的双脉冲技术的稳健性。我们在广泛的刺激频率范围内获得了相对T脉冲有效性的估计值。该实验结果表明,通过双脉冲技术的行为版本获得的不应期估计值不依赖于刺激频率的任意选择。然而,最好避免使用高于100 Hz的刺激频率。在第二个实验中,我们应用双脉冲技术,使用高于T脉冲强度的C脉冲强度来估计脑干与奖励相关神经元的不应期。使用可移动电极,我们在4只动物中测试了9个后脑和7个中脑部位。在后脑中,最易兴奋的与奖励相关的神经元的绝对不应期小于0.6和0.8毫秒,并且在初始兴奋后至少在5至10毫秒之间出现超常期。发现中脑与奖励相关的神经元具有更多异质性的生理特征。中脑中最易兴奋的细胞的绝对不应期小于0.4毫秒,并且在初始兴奋后2.4毫秒就出现超常期。在一些中脑部位,我们首先观察到突然的初始恢复,随后是一个平台期,接着是再次的持续恢复,这种模式在后脑中从未观察到。提出了与奖励相关的神经元的两个不同亚群的贡献的假设,并讨论了单胺能通路在奖励中的意义。

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Behavioral determination of refractory periods of the brainstem substrates of self-stimulation.自我刺激的脑干基质不应期的行为学测定
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