Tavanti Francesco, Calzolari Arrigo
CNR-NANO Research Center S3, Via Campi 213/a, 41125 Modena, Italy.
ACS Omega. 2022 Jun 24;7(27):23255-23264. doi: 10.1021/acsomega.2c01359. eCollection 2022 Jul 12.
The concept of order in disordered materials is the key to controlling the mechanical, electrical, and chemical properties of amorphous compounds widely exploited in industrial applications and daily life. Rather, it is far from being understood. Here, we propose a multi-technique numerical approach to study the order/disorder of amorphous materials on both the short- and the medium-range scale. We combine the analysis of the disorder level based on chemical and physical features with their geometrical and topological properties, defining a previously unexplored interplay between the different techniques and the different order scales. We applied this scheme to amorphous GeSe and GeSeTe chalcogenides, showing a modulation of the internal disorder as a function of the stoichiometry and composition: Se-rich systems are less ordered than Ge-rich systems at the short- and medium-range length scales. The present approach can be easily applied to more complex systems containing three or more atom types without any a priori knowledge about the system chemical-physical features, giving a deep insight into the understanding of complex systems.
无序材料中的有序概念是控制在工业应用和日常生活中广泛使用的非晶化合物的机械、电气和化学性质的关键。然而,这一概念远未被理解。在这里,我们提出一种多技术数值方法,用于在短程和中程尺度上研究非晶材料的有序/无序。我们将基于化学和物理特征的无序水平分析与它们的几何和拓扑性质相结合,定义了不同技术和不同有序尺度之间以前未被探索的相互作用。我们将该方案应用于非晶GeSe和GeSeTe硫族化合物,结果表明内部无序随化学计量比和组成而变化:在短程和中程长度尺度上,富硒系统的有序程度低于富锗系统。本方法可以很容易地应用于包含三种或更多原子类型的更复杂系统,而无需对系统的化学物理特征有任何先验知识,从而深入了解复杂系统。