锗硒光伏：掺杂、界面层与器件

GeSe photovoltaics: doping, interfacial layer and devices.

作者信息

Smiles Matthew J, Shalvey Thomas P, Thomas Luke, Hobson Theodore D C, Jones Leanne A H, Phillips Laurie J, Don Christopher, Beesley Thomas, Thakur Pardeep K, Lee Tien-Lin, Durose Ken, Major Jonathan D, Veal Tim D

机构信息

Stephenson Institute for Renewable Energy and Department of Physics, University of Liverpool, Liverpool, L69 7ZF, UK.

Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0DE, UK.

出版信息

Faraday Discuss. 2022 Oct 28;239(0):250-262. doi: 10.1039/d2fd00048b.

DOI:10.1039/d2fd00048b

PMID:35848780

Abstract

Germanium selenide (GeSe) bulk crystals, thin films and solar cells are investigated with a focus on acceptor-doping with silver (Ag) and the use of an SbSe interfacial layer. The Ag-doping of GeSe occurred by a stoichiometric melt growth technique that created Ag-doped GeSe bulk crystals. A combination of capacitance voltage measurements, synchrotron radiation photoemission spectroscopy and surface space-charge calculations indicates that Ag-doping increases the hole density from 5.2 × 10 cm to 1.9 × 10 cm. The melt-grown material is used as the source for thermally evaporated GeSe films within solar cells. The cell structure with the highest efficiency of 0.260% is FTO/CdS/SbSe/undoped-GeSe/Au, compared with solar cells without the SbSe interfacial layer or with the Ag-doped GeSe.

摘要

对硒化锗（GeSe）体晶体、薄膜和太阳能电池进行了研究，重点是银（Ag）的受主掺杂以及使用SbSe界面层。通过化学计量熔体生长技术实现了GeSe的Ag掺杂，该技术制备出了Ag掺杂的GeSe体晶体。电容电压测量、同步辐射光电子能谱和表面空间电荷计算相结合表明，Ag掺杂使空穴密度从5.2×10¹⁵ cm⁻³增加到1.9×10¹⁷ cm⁻³。熔体生长的材料用作太阳能电池内热蒸发GeSe薄膜的源材料。与没有SbSe界面层或Ag掺杂GeSe的太阳能电池相比，效率最高为0.260%的电池结构是FTO/CdS/SbSe/未掺杂-GeSe/Au。