Lai Minliang, Shin Donghoon, Jibril Liban, Mirkin Chad A
Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.
International Institute for Nanotechnology, Northwestern University, Evanston, Illinois 60208, United States.
J Am Chem Soc. 2022 Aug 3;144(30):13823-13830. doi: 10.1021/jacs.2c05082. Epub 2022 Jul 21.
A significant bottleneck in the discovery of new mixed halide perovskite (MHP) compositions and structures is the time-consuming and low-throughput nature of current synthesis and screening methods. Here, a high-throughput strategy is presented that can be used to synthesize combinatorial libraries of MHPs with deliberate control over the halide mixing ratio and particle size (for example, CsPb(BrCl) (0 < < 1) with sizes between ∼100 and 400 nm). This strategy combines evaporation-crystallization polymer pen lithography (EC-PPL) and defect-engineered anion exchange to spatially encode particle size and composition, respectively. Laser exposure is used to selectively modify the defect concentration of individual particles, and thus the degree of subsequent anion exchange, allowing the preparation for ultra-high-density arrays of distinct compositions (>1 unique particle/μm). This method was utilized to rapidly generate a library of ∼4000 CsPb(BrCl) particles that was then screened for high-efficiency blue photoemission, which yielded CsPb(BrCl) as the composition with the highest photoluminescence intensity. The combinatorial synthesis and screening strategy provided here, and the mechanistic understanding of the defect-engineering process gleaned from it, will enable the rapid discovery of exceptional MHP optoelectronic materials.
新型混合卤化物钙钛矿(MHP)成分和结构发现过程中的一个重大瓶颈是当前合成与筛选方法耗时且通量低。本文提出了一种高通量策略,可用于合成MHP的组合库,并能对卤化物混合比例和粒径进行精确控制(例如,粒径在约100至400纳米之间的CsPb(BrCl) (0 < < 1))。该策略将蒸发结晶聚合物笔光刻(EC-PPL)与缺陷工程化阴离子交换相结合,分别在空间上编码粒径和成分。利用激光曝光选择性地改变单个颗粒的缺陷浓度,进而改变后续阴离子交换的程度,从而制备出超高密度的不同成分阵列(>1个独特颗粒/μm)。此方法被用于快速生成一个包含约4000个CsPb(BrCl)颗粒的库,然后对其进行高效蓝光发射筛选,结果表明CsPb(BrCl)是光致发光强度最高的成分。本文提供的组合合成与筛选策略,以及从中获得的对缺陷工程过程的机理理解,将有助于快速发现优异的MHP光电子材料。