瞬态反射显微镜揭示立方砷化硼中的双极性高迁移率。

High ambipolar mobility in cubic boron arsenide revealed by transient reflectivity microscopy.

机构信息

Chinese Academy of Sciences (CAS) Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China.

Department of Electrical and Computer Engineering and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, TX 77204, USA.

出版信息

Science. 2022 Jul 22;377(6604):433-436. doi: 10.1126/science.abn4727. Epub 2022 Jul 21.

DOI:10.1126/science.abn4727

PMID:35862517

Abstract

Semiconducting cubic boron arsenide (c-BAs) has been predicted to have carrier mobility of 1400 square centimeters per volt-second for electrons and 2100 square centimeters per volt-second for holes at room temperature. Using pump-probe transient reflectivity microscopy, we monitored the diffusion of photoexcited carriers in single-crystal c-BAs to obtain their mobility. With near-bandgap 600-nanometer pump pulses, we found a high ambipolar mobility of 1550 ± 120 square centimeters per volt-second, in good agreement with theoretical prediction. Additional experiments with 400-nanometer pumps on the same spot revealed a mobility of >3000 square centimeters per volt-second, which we attribute to hot electrons. The observation of high carrier mobility, in conjunction with high thermal conductivity, enables an enormous number of device applications for c-BAs in high-performance electronics and optoelectronics.

摘要

半导体立方砷化硼（c-BAs）在室温下被预测电子迁移率为 1400 平方厘米每伏秒，空穴迁移率为 2100 平方厘米每伏秒。我们使用泵浦-探测瞬态反射率显微镜来监测单晶 c-BAs 中光激发载流子的扩散，以获得它们的迁移率。使用近带隙的 600 纳米泵浦脉冲，我们发现了一个高的双极性迁移率为 1550 ± 120 平方厘米每伏秒，与理论预测非常吻合。在同一位置使用 400 纳米泵浦的额外实验揭示了 >3000 平方厘米每伏秒的迁移率，我们将其归因于热电子。高载流子迁移率的观察，结合高热导率，使得 c-BAs 在高性能电子学和光电子学中有大量的器件应用。