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亚铁磁薄膜中纳秒电流脉冲诱导的斯格明子零场成核与快速运动

Zero-Field Nucleation and Fast Motion of Skyrmions Induced by Nanosecond Current Pulses in a Ferrimagnetic Thin Film.

作者信息

Quessab Yassine, Xu Jun-Wen, Cogulu Egecan, Finizio Simone, Raabe Jörg, Kent Andrew D

机构信息

Center for Quantum Phenomena, Department of Physics, New York University, New York, New York, 10003, United States.

Swiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland.

出版信息

Nano Lett. 2022 Aug 10;22(15):6091-6097. doi: 10.1021/acs.nanolett.2c01038. Epub 2022 Jul 25.

Abstract

Skyrmion racetrack memories are highly attractive for next-generation data storage technologies. Skyrmions are noncollinear spin textures stabilized by chiral interactions. To achieve a fast-operating memory device, it is critical to move skyrmions at high speeds. The skyrmion dynamics induced by spin-orbit torques (SOTs) in the commonly studied ferromagnetic films is hindered by strong pinning effects and a large skyrmion Hall effect causing deflection of the skyrmion toward the racetrack edge, which can lead to information loss. Here, we investigate the current-induced nucleation and motion of skyrmions in ferrimagnetic Pt/CoGd/(W or Ta) thin films. We first reveal field-free skyrmion nucleation mediated by Joule heating. We then achieve fast skyrmion motion driven by SOTs with velocities as high as 610 m s and a small skyrmion Hall angle |θ| ≲ 3°. Our results show that ferrimagnets are better candidates for fast skyrmion-based memory devices with low risk of information loss.

摘要

斯格明子赛道存储器对于下一代数据存储技术极具吸引力。斯格明子是非共线自旋纹理,由手性相互作用稳定。为实现快速运行的存储设备,高速移动斯格明子至关重要。在通常研究的铁磁薄膜中由自旋轨道转矩(SOT)诱导的斯格明子动力学受到强钉扎效应以及导致斯格明子向赛道边缘偏转的大斯格明子霍尔效应的阻碍,这可能导致信息丢失。在此,我们研究了亚铁磁Pt/CoGd/(W或Ta)薄膜中电流诱导的斯格明子成核和运动。我们首先揭示了由焦耳热介导的无场斯格明子成核。然后我们实现了由SOT驱动的快速斯格明子运动,速度高达610 m/s且斯格明子霍尔角|θ|≲3°。我们的结果表明,亚铁磁体是基于斯格明子且信息丢失风险低的快速存储设备的更好候选材料。

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