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利用反铁磁斯格明子基赛道存储器中自旋极化电流对单个斯格明子进行成核与操控。

Nucleation and manipulation of single skyrmions using spin-polarized currents in antiferromagnetic skyrmion-based racetrack memories.

作者信息

Belrhazi Hamza, El Hafidi Mohamed

机构信息

Condensed Matter Physics Laboratory, Department of Physics, Faculty of Science Ben M'sik, Hassan II University of Casablanca, D. El Harty Av., B.P 7955, 20165, Casablanca, Morocco.

出版信息

Sci Rep. 2022 Sep 8;12(1):15225. doi: 10.1038/s41598-022-19587-6.

DOI:10.1038/s41598-022-19587-6
PMID:36076059
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9458664/
Abstract

In this work, an ultrafast nucleation of an isolated anti-ferromagnetic (AFM) skyrmion was reported in an AFM layer with DMi strengths of 0.47[Formula: see text]0.32 [Formula: see text] using spin-transfer torque by locally injecting pure spin currents into magnetic tracks. Besides, we revealed the key advantages of AFM skyrmion-based racetrack memories by comparing the motion of AFM and FM skyrmions driven by spin-orbit torques (SOTs) for different skyrmion sizes along racetrack memories with various notch sizes. Our results indicate that for AFM skyrmion, the skyrmion Hall effect does not exist during the skyrmion motion, therefore at small skyrmion sizes, we succeeded to overcome the repulsive forces developed in the notch area for low and large SOTs. The obtained findings were carefully analyzed by computing the variation of energy barriers associated with the notch for different skyrmion sizes using minimum energy path (MEP) calculations. We showed that the larger the skyrmion size, the harder it is to shrink the skyrmion in the notch which produces a high energy barrier (E) for large skyrmion sizes. Moreover, as the notch size increases, the skyrmion size shrinks further, and hence E increases proportionally. Nevertheless, we proved that AFM skyrmions are more efficient and flexible than FM skyrmions against boundary forces.

摘要

在这项工作中,通过向磁道局部注入纯自旋电流利用自旋转移力矩,在具有0.47[公式:见正文]0.32[公式:见正文]的DMI强度的反铁磁(AFM)层中报道了孤立反铁磁斯格明子的超快成核。此外,通过比较不同斯格明子尺寸的AFM和FM斯格明子在具有各种缺口尺寸的赛道存储器中由自旋轨道力矩(SOT)驱动的运动,我们揭示了基于AFM斯格明子的赛道存储器的关键优势。我们的结果表明,对于AFM斯格明子,在斯格明子运动过程中不存在斯格明子霍尔效应,因此在小斯格明子尺寸下,我们成功克服了在低和大SOT时在缺口区域产生的排斥力。通过使用最小能量路径(MEP)计算来计算与不同斯格明子尺寸的缺口相关的能垒变化,对获得的结果进行了仔细分析。我们表明,斯格明子尺寸越大,在缺口中收缩斯格明子就越困难,这对于大斯格明子尺寸会产生高能量垒(E)。此外,随着缺口尺寸增加,斯格明子尺寸进一步缩小,因此E成比例增加。然而,我们证明了AFM斯格明子在抵抗边界力方面比FM斯格明子更高效、更灵活。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f025/9458664/cf8a355fdc41/41598_2022_19587_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f025/9458664/4ed563aa6d60/41598_2022_19587_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f025/9458664/5ecab51c1187/41598_2022_19587_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f025/9458664/6350edc71a07/41598_2022_19587_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f025/9458664/045b92b7f2a0/41598_2022_19587_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f025/9458664/9a783567b659/41598_2022_19587_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f025/9458664/ea679016ab66/41598_2022_19587_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f025/9458664/cf8a355fdc41/41598_2022_19587_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f025/9458664/4ed563aa6d60/41598_2022_19587_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f025/9458664/5ecab51c1187/41598_2022_19587_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f025/9458664/6350edc71a07/41598_2022_19587_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f025/9458664/045b92b7f2a0/41598_2022_19587_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f025/9458664/9a783567b659/41598_2022_19587_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f025/9458664/ea679016ab66/41598_2022_19587_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f025/9458664/cf8a355fdc41/41598_2022_19587_Fig8_HTML.jpg

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Realization of Isolated and High-Density Skyrmions at Room Temperature in Uncompensated Synthetic Antiferromagnets.在未补偿的合成反铁磁体中室温下实现孤立且高密度的斯格明子
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