Zhang Dongqi, Tao Tao, Sun Haiding, Li Siqi, Jia Hongfeng, Yu Huabin, Shao Pengfei, Li Zhenhua, Wu Yaozheng, Xie Zili, Wang Ke, Long Shibing, Liu Bin, Zhang Rong, Zheng Youdou
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China.
School of Microelectronics, University of Science and Technology of China, Hefei 230026, China.
Nanomaterials (Basel). 2022 Jul 21;12(14):2508. doi: 10.3390/nano12142508.
AlGaN nanorods have attracted increasing amounts of attention for use in ultraviolet (UV) optoelectronic devices. Here, self-assembled AlGaN nanorods with embedding quantum disks (Qdisks) were grown on Si(111) using plasma-assisted molecular beam epitaxy (PA-MBE). The morphology and quantum construction of the nanorods were investigated and well-oriented and nearly defect-free nanorods were shown to have a high density of about 2 × 10 cm. By controlling the substrate temperature and Al/Ga ratio, the emission wavelengths of the nanorods could be adjusted from 276 nm to 330 nm. By optimizing the structures and growth parameters of the Qdisks, a high internal quantum efficiency (IQE) of the AlGaN Qdisk nanorods of up to 77% was obtained at 305 nm, which also exhibited a shift in the small emission wavelength peak with respect to the increasing temperatures during the PL measurements.
氮化铝镓纳米棒在紫外光电子器件中的应用已引起越来越多的关注。在此，利用等离子体辅助分子束外延（PA-MBE）在Si(111)上生长了嵌入量子盘（Q盘）的自组装氮化铝镓纳米棒。研究了纳米棒的形貌和量子结构，结果表明取向良好且几乎无缺陷的纳米棒具有约2×10¹² cm⁻²的高密度。通过控制衬底温度和铝/镓比，纳米棒的发射波长可在276 nm至330 nm之间调节。通过优化Q盘的结构和生长参数，在305 nm处获得了高达77%的氮化铝镓Q盘纳米棒的高内量子效率（IQE），在光致发光（PL）测量过程中，其发射波长小峰也随温度升高而发生偏移。
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