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胶体晶体的异质外延生长:生长模式对粒子间相互作用和晶格间距的依赖性。

Heteroepitaxial Growth of Colloidal Crystals: Dependence of the Growth Mode on the Interparticle Interactions and Lattice Spacing.

作者信息

Nozawa Jun, Uda Satoshi, Niinomi Hiromasa, Okada Junpei, Fujiwara Kozo

机构信息

Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.

New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan.

出版信息

J Phys Chem Lett. 2022 Aug 4;13(30):6995-7000. doi: 10.1021/acs.jpclett.2c01707. Epub 2022 Jul 27.

DOI:10.1021/acs.jpclett.2c01707
PMID:35894644
Abstract

Epitaxial growth is one of the most important techniques for the control of crystal growth, especially for growing thin-film semiconductor crystals. Similarly, colloidal epitaxy, a template-assisted self-assembly method, is a powerful technique for controlling the structure of colloidal crystals. In this study, heteroepitaxial growth, which differs from homoepitaxial growth of conventional colloidal epitaxy, using foreign colloidal crystals as a substrate, was used to grow single-component colloidal crystal films. The Frank-van der Merwe (FM), Stranski-Krastanov (SK), and Volmer-Weber (VW) modes were observed, and the mode varied with the lattice-misfit ratio and interparticle interactions between the substrate and epitaxial phase. The transition of the growth mode (from SK to VW) and the coexistence of different growth modes (FM and VW) were observed, and their processes were revealed by in situ observation. Colloidal heteroepitaxy was confirmed to be useful for controlling structure, which will enable exploration of novel colloidal self-assembly structures.

摘要

外延生长是控制晶体生长的最重要技术之一,特别是对于生长薄膜半导体晶体而言。同样,胶体外延作为一种模板辅助自组装方法,是控制胶体晶体结构的有力技术。在本研究中,使用外来胶体晶体作为衬底的异质外延生长不同于传统胶体外延的同质外延生长,被用于生长单组分胶体晶体薄膜。观察到了弗兰克 - 范德梅尔韦(FM)、斯特兰斯基 - 克拉斯坦诺夫(SK)和沃尔默 - 韦伯(VW)模式,并且该模式随晶格失配率以及衬底与外延相之间的粒子间相互作用而变化。观察到了生长模式的转变(从SK到VW)以及不同生长模式(FM和VW)的共存,并且通过原位观察揭示了它们的过程。胶体异质外延被证实对于控制结构是有用的,这将有助于探索新型胶体自组装结构。

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