Faculty of Computer Science, Electronics and Telecommunications, AGH University of Science and Technology in Krakow, 30-059 Krakow, Poland.
The Henryk Niewodniczanski Institute of Nuclear Physics Polish Academy of Sciences in Krakow, 30-236 Krakow, Poland.
Int J Mol Sci. 2022 Jul 28;23(15):8358. doi: 10.3390/ijms23158358.
Cuprous oxide is a semiconductor with potential for use in photocatalysis, sensors, and photovoltaics. We used ion implantation to modify the properties of CuO oxide. Thin films of CuO were deposited with magnetron sputtering and implanted with low-energy Cr ions of different dosages. The X-ray diffraction method was used to determine the structure and composition of deposited and implanted films. The optical properties of the material before and after implantation were studied using spectrophotometry and spectroscopic ellipsometry. The investigation of surface topography was performed with atomic force microscopy. The implantation had little influence on the atomic lattice constant of the oxide structure, and no clear dependence of microstrain or crystalline size on the dose of implantation was found. The appearance of phase change was observed, which could have been caused by the implantation. Ellipsometry measurements showed an increase in the total thickness of the sample with an increase in the amount of implanted Cr ions, which indicates the influence of implantation on the properties of the surface and subsurface region. The refractive index , extinction coefficient , and absorption coefficient optical parameters show different energy dependences related to implantation dose.
氧化亚铜是一种在光催化、传感器和光伏领域有应用潜力的半导体。我们使用离子注入来改变氧化铜的性质。采用磁控溅射沉积氧化铜薄膜,并注入不同剂量的低能 Cr 离子。X 射线衍射法用于确定沉积和注入薄膜的结构和组成。采用分光光度法和光谱椭圆偏振法研究了注入前后材料的光学性质。采用原子力显微镜研究了表面形貌。注入对氧化物结构的原子晶格常数影响很小,也没有发现微应变或晶粒尺寸与注入剂量的明显依赖关系。观察到了相变的出现,这可能是注入造成的。椭圆偏振测量表明,随着注入的 Cr 离子数量的增加,样品的总厚度增加,这表明注入对表面和次表面区域的性质有影响。折射率 n、消光系数 k 和吸收系数 α 光学参数显示出与注入剂量相关的不同能量依赖性。