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用于柔性可充电电池的塑料薄膜上的硅锗阳极合成

SiGe anode synthesis on plastic films for flexible rechargeable batteries.

作者信息

Murata H, Nozawa K, Suzuki T, Kado Y, Suemasu T, Toko K

机构信息

Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan.

Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8573, Japan.

出版信息

Sci Rep. 2022 Aug 12;12(1):13779. doi: 10.1038/s41598-022-18072-4.

Abstract

SiGe is a promising anode material for replacing graphite in next generation thin-film batteries owing to its high theoretical charge/discharge capacity. Metal-induced layer exchange (LE) is a unique technique used for the low-temperature synthesis of SiGe layers on arbitrary substrates. Here, we demonstrate the synthesis of SiGe (x = 0-1) layers on plastic films using Al-induced LE. The resulting SiGe layers exhibited high electrical conductivity (up to 1200 S cm), reflecting the self-organized doping effect of LE. Moreover, the SiGe layer synthesized by the same process was adopted as the anode for the lithium-ion battery. All SiGe anodes showed clear charge/discharge operation and high coulombic efficiency (≥ 97%) after 100 cycles. While the discharge capacities almost reflected the theoretical values at each x at 0.1 C, the capacity degradation with increasing current rate strongly depended on x. Si-rich samples exhibited high initial capacity and low capacity retention, while Ge-rich samples showed contrasting characteristics. In particular, the SiGe layers with x ≥ 0.8 showed excellent current rate performance owing to their high electrical conductivity and low volume expansion, maintaining a high capacity (> 500 mAh g) even at a high current rate (10 C). Thus, we revealed the relationship between SiGe composition and anode characteristics for the SiGe layers formed by LE at low temperatures. These results will pave the way for the next generation of flexible batteries based on SiGe anodes.

摘要

由于其高理论充/放电容量,硅锗是下一代薄膜电池中有望替代石墨的阳极材料。金属诱导层交换(LE)是一种用于在任意衬底上低温合成硅锗层的独特技术。在此,我们展示了使用铝诱导的层交换在塑料薄膜上合成硅锗(x = 0 - 1)层。所得的硅锗层表现出高电导率(高达1200 S/cm),这反映了层交换的自组织掺杂效应。此外,通过相同工艺合成的硅锗层被用作锂离子电池的阳极。所有硅锗阳极在100次循环后都显示出清晰的充/放电操作和高库仑效率(≥97%)。虽然在0.1 C时放电容量几乎反映了每个x处的理论值,但随着电流速率增加的容量衰减强烈依赖于x。富硅样品表现出高初始容量和低容量保持率,而富锗样品则表现出相反的特性。特别是,x≥0.8的硅锗层由于其高电导率和低体积膨胀而表现出优异的电流速率性能,即使在高电流速率(10 C)下也能保持高容量(>500 mAh/g)。因此,我们揭示了通过低温层交换形成的硅锗层的硅锗组成与阳极特性之间的关系。这些结果将为基于硅锗阳极的下一代柔性电池铺平道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b798/9374656/a9c303e1bbf1/41598_2022_18072_Fig1_HTML.jpg

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