Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications.

Based on recent works, the most desirable high-temperature thermoelectric material would be highly-doped SiGe crystals or films with sufficiently high Ge concentrations so that simultaneous enhancing the power factor and wave-engineering of phonons could be possible on the ballistic thermal conductor. However, available thin film deposition methods such as metal organic chemical vapor deposition, electron-beam evaporation, or sputtering are unable to produce highly-doped SiGe single crystals or thick films of high quality. To fabricate the desired material, we here employ liquid phase epitaxy to make highly-doped (up to 2% GaP doping) SiGe crystals with minimized concentration variations on Si (111) and (100) substrates. We find that growing SiGe (x = 0.05~0.25) crystals from Ga solvents at relatively high vacuum pressure (0.1 torr) displays significant deviations from previous calculated phase diagram. Moreover, doping GaP into SiGe is found to affect the solubility of the system but not the resulting Ge concentration. We thus plot a new pressure-dependent phase diagram. We further demonstrate that the new pressure-induced liquid phase epitaxy technique can yield SiGe crystals of much higher Ge concentrations (x > 0.8) than those grown by the conventional method.