Shan Jingyuan, Fang Sunmiao, Wang Wendong, Zhao Wen, Zhang Rui, Liu Bingzhi, Lin Li, Jiang Bei, Ci Haina, Liu Ruojuan, Wang Wen, Yang Xiaoqin, Guo Wenyue, Rümmeli Mark H, Guo Wanlin, Sun Jingyu, Liu Zhongfan
Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China.
Natl Sci Rev. 2021 Sep 8;9(7):nwab169. doi: 10.1093/nsr/nwab169. eCollection 2022 Jul.
Direct synthesis of high-quality graphene on dielectric substrates without a transfer process is of vital importance for a variety of applications. Current strategies for boosting high-quality graphene growth, such as remote metal catalyzation, are limited by poor performance with respect to the release of metal catalysts and hence suffer from a problem with metal residues. Herein, we report an effective approach that utilizes a metal-containing species, copper acetate, to continuously supply copper clusters in a gaseous form to aid transfer-free growth of graphene over a wafer scale. The thus-derived graphene films were found to show reduced multilayer density and improved electrical performance and exhibited a carrier mobility of 8500 cm V s. Furthermore, droplet-based hydrovoltaic electricity generator devices based on directly grown graphene were found to exhibit robust voltage output and long cyclic stability, in stark contrast to their counterparts based on transferred graphene, demonstrating the potential for emerging energy harvesting applications. The work presented here offers a promising solution to organize the metal catalytic booster toward transfer-free synthesis of high-quality graphene and enable smart energy generation.
在介电基板上直接合成高质量石墨烯而无需转移过程对于各种应用至关重要。当前促进高质量石墨烯生长的策略,如远程金属催化,受到金属催化剂释放性能不佳的限制,因此存在金属残留问题。在此,我们报告了一种有效的方法,该方法利用含金属物种醋酸铜以气态形式连续供应铜簇,以帮助在晶圆规模上实现无转移的石墨烯生长。发现由此获得的石墨烯薄膜具有降低的多层密度和改善的电学性能,载流子迁移率为8500 cm V s。此外,基于直接生长的石墨烯的液滴基水力发电机装置表现出强劲的电压输出和长期循环稳定性,这与基于转移石墨烯的同类装置形成鲜明对比,展示了其在新兴能量收集应用中的潜力。本文介绍的工作为组织金属催化促进剂以实现高质量石墨烯的无转移合成并实现智能能源生成提供了一个有前景的解决方案。