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聚丙烯腈作为用于石墨烯晶圆级转移的高效转移介质。

Polyacrylonitrile as an Efficient Transfer Medium for Wafer-Scale Transfer of Graphene.

作者信息

Shang Mingpeng, Bu Saiyu, Hu Zhaoning, Zhao Yixuan, Liao Junhao, Zheng Chunyang, Liu Wenlin, Lu Qi, Li Fangfang, Wu Haotian, Shi Zhuofeng, Zhu Yaqi, Xu Zhiying, Guo Bingbing, Yu Beiming, Li Chunhu, Zhang Xiaodong, Xie Qin, Yin Jianbo, Jia Kaicheng, Peng Hailin, Lin Li, Liu Zhongfan

机构信息

Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China.

Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.

出版信息

Adv Mater. 2024 Jul;36(29):e2402000. doi: 10.1002/adma.202402000. Epub 2024 May 20.

Abstract

The disparity between growth substrates and application-specific substrates can be mediated by reliable graphene transfer, the lack of which currently strongly hinders the graphene applications. Conventionally, the removal of soft polymers, that support the graphene during the transfer, would contaminate graphene surface, produce cracks, and leave unprotected graphene surface sensitive to airborne contaminations. In this work, it is found that polyacrylonitrile (PAN) can function as polymer medium for transferring wafer-size graphene, and encapsulating layer to deliver high-performance graphene devices. Therefore, PAN, that is compatible with device fabrication, does not need to be removed for subsequent applications. The crack-free transfer of 4 in. graphene onto SiO/Si wafers, and the wafer-scale fabrication of graphene-based field-effect transistor arrays with no observed clear doping, uniformly high carrier mobility (≈11 000 cm V s), and long-term stability at room temperature, are achieved. This work presents new concept for designing the transfer process of 2D materials, in which multifunctional polymer can be retained, and offers a reliable method for fabricating wafer-scale devices of 2D materials with outstanding performance.

摘要

生长衬底和特定应用衬底之间的差异可以通过可靠的石墨烯转移来调节,而目前缺乏这种转移严重阻碍了石墨烯的应用。传统上,在转移过程中支撑石墨烯的软聚合物的去除会污染石墨烯表面、产生裂纹,并使未受保护的石墨烯表面对空气中的污染物敏感。在这项工作中,发现聚丙烯腈(PAN)可以作为转移晶圆级石墨烯的聚合物介质,以及作为封装层来制造高性能石墨烯器件。因此,与器件制造兼容的PAN在后续应用中无需去除。实现了将4英寸石墨烯无裂纹转移到SiO/Si晶圆上,并实现了基于石墨烯的场效应晶体管阵列的晶圆级制造,该阵列未观察到明显的掺杂,具有均匀的高载流子迁移率(≈11000 cm²V⁻¹s⁻¹),并且在室温下具有长期稳定性。这项工作提出了设计二维材料转移过程的新概念,其中多功能聚合物可以保留,并提供了一种可靠的方法来制造具有优异性能的二维材料晶圆级器件。

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