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基于高铝高炉矿渣的钙镁铝黄长石(Ca(MgAl)(SiAlO))中,Eu作为结构探针通过位点选择性占据实现CMSA的相变及可调谐多模白色发光。

Eu as the structural probe in the phase transformation of CMSA by site-selective occupancy and adjustable multimode white luminescence in Ca(MgAl)(SiAlO) akermanite based on high-aluminum blast furnace slag.

作者信息

Cao Fabin, Xiong Ying, Liu Jian, Zhang Jingwen, Qin Kailong, Sun Jingbo, Liu Weiming, Shen Xingmei, Wu Xingrong, Wu Zhaojin

机构信息

Key Laboratory of Metallurgical Emission Reduction & Resources Recycling(Anhui University of Technology), Minstry of Education, Maanshan 243002, China.

Anhui Province Key Laboratory of Metallurgical Engineering & Resources Recycling (Anhui University of Technology), Maanshan 243002, China.

出版信息

Dalton Trans. 2022 Sep 13;51(35):13301-13310. doi: 10.1039/d2dt01532c.

Abstract

A tunable multimode white emission Ca(MgAl)(SiAlO):Eu/Eu phosphor was prepared by doping EuO in molten high-aluminum blast furnace slag. The structural probe Eu was studied during phase transformation between the glassy state and Ca(MgAl)(SiAlO) crystals based on site-selective Eu occupancy. When the doped Eu ions occupied two different Ca sites in the matrix, blue light (421 nm) and green light (516 nm) emissions were observed corresponding to two types of Eu, namely Eu (Mg → Al) and Eu (Si → Al). The effects of Eu concentration (0.1-2.0 mol%), heat treatment temperature (800-1000 °C), and thermal quenching temperature (30-150 °C) on the structural evolution of the emission unit were studied by differential scanning calorimetry (DSC), photoluminescence spectroscopy (PL) and X-ray diffraction (XRD) analyses. The Eu (Mg → Al) structure formed by site-selective Eu occupancy possessed better structural stability in the Ca(MgAl)(SiAlO) crystal matrix, in favour of light-emitting diode (LED) illumination and plasma display panels (PDPs).

摘要

通过在熔融的高铝高炉矿渣中掺杂EuO制备了一种可调谐多模白色发射Ca(MgAl)(SiAlO):Eu/Eu荧光粉。基于位点选择性Eu占据情况,研究了结构探针Eu在玻璃态与Ca(MgAl)(SiAlO)晶体之间的相变过程。当掺杂的Eu离子占据基体中的两个不同Ca位点时,观察到蓝光(421 nm)和绿光(516 nm)发射,分别对应两种类型的Eu,即Eu (Mg → Al)和Eu (Si → Al)。通过差示扫描量热法(DSC)、光致发光光谱法(PL)和X射线衍射(XRD)分析,研究了Eu浓度(0.1 - 2.0 mol%)、热处理温度(800 - 1000 °C)和热猝灭温度(30 - 150 °C)对发射单元结构演变的影响。通过位点选择性Eu占据形成的Eu (Mg → Al)结构在Ca(MgAl)(SiAlO)晶体基体中具有更好的结构稳定性,有利于发光二极管(LED)照明和等离子体显示面板(PDP)。

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