Raja Arumugam, Jauhar Ro Mu, Ramachandran Kasthuri, Vediyappan Sivasubramani, Kumar Raji Ramesh, Pandian Muthu Senthil, Perumalsamy Ramasamy
CNR-SPIN, University of Salerno, Fisciano 84084, Salerno, Italy.
Department of Physical Sciences, Institute of Science and Humanities, Saveetha School of Engineering, Saveetha University, Chennai 602105, India.
ACS Omega. 2022 Jul 28;7(32):27798-27803. doi: 10.1021/acsomega.1c05972. eCollection 2022 Aug 16.
The binary chalcogenide material SbTe was synthesized via the melting technique. The synthesized materials were converted to a single crystal through the Bridgman-Stockbarger technique. The phase purity and structural properties of the grown crystal were analyzed using powder X-ray diffraction and single-crystal X-ray diffraction measurements. X-ray photoemission spectroscopy reveals the local intermolecular bonding, changes in the stoichiometry, and the oxidation states of the elements present in the crystal. Transport properties like electrical resistivity, Seebeck coefficient, and thermal conductivity were measured. The power factor and figure of merit (ZT) of the grown crystal were calculated.
通过熔融技术合成了二元硫族化物材料SbTe。采用布里奇曼-斯托克巴杰技术将合成的材料转化为单晶。使用粉末X射线衍射和单晶X射线衍射测量分析了生长晶体的相纯度和结构性质。X射线光电子能谱揭示了晶体中存在的元素的局部分子间键合、化学计量变化和氧化态。测量了诸如电阻率、塞贝克系数和热导率等输运性质。计算了生长晶体的功率因数和品质因数（ZT）。
