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二维IV-V族化合物中具有巨大自旋分裂的全区域持久自旋纹理。

Full-zone persistent spin textures with giant spin splitting in two-dimensional group IV-V compounds.

作者信息

Absor Moh Adhib Ulil, Lukmantoro Arif, Santoso Iman

机构信息

Department of Physics, Universitas Gadjah Mada, Sekip Utara BLS 21, Yogyakarta 55281, Indonesia.

出版信息

J Phys Condens Matter. 2022 Sep 2;34(44). doi: 10.1088/1361-648X/ac8c14.

Abstract

Persistent spin texture (PST), a property of solid-state materials maintaining unidirectional spin polarization in the momentum-space, offers a route to deliver the necessary long carrier spin lifetimes through the persistent spin helix (PSH) mechanism. However, most of the discovered PST locally occurred in the small part around certain high symmetry-points or lines in the first Brillouin zone (FBZ), thus limiting the stability of the PSH state. Herein, by symmetry analysis and first-principles calculations, we report the emergence of full-zone PST (FZPST), a phenomenon displaying the PST in the whole FBZ, in the two-dimensional group IV-VA2B2(= Si, Sn, Ge;= Bi, Sb) compounds. Due to the existence of the in-plane mirror symmetry operation in the wave vector point group symmetry for the arbitraryk⃗in the whole FBZ, fully out-of-plane spin polarization is observed in the-space, thus maintaining the FZPST. Importantly, we observed giant spin splitting in which the PST sustains, supporting large spin-orbit coupling parameters and small wavelengths of the PSH states. Ourk⃗⋅p⃗analysis demonstrated that the FZPST is robust for the non-degenerate bands, which can be effectively controlled by the application of an external electric field, thus offering a promising platform for future spintronic applications.

摘要

持续自旋纹理(PST)是固态材料的一种特性,可在动量空间中保持单向自旋极化,它提供了一条通过持续自旋螺旋(PSH)机制来实现必要的长载流子自旋寿命的途径。然而,大多数已发现的PST局部出现在第一布里渊区(FBZ)中某些高对称点或线周围的小区域,从而限制了PSH态的稳定性。在此,通过对称性分析和第一性原理计算,我们报道了在二维IV-VA2B2(= Si、Sn、Ge;= Bi、Sb)化合物中出现的全区域PST(FZPST)现象,即在整个FBZ中呈现PST的现象。由于在整个FBZ中任意(\vec{k})的波矢点群对称性中存在面内镜像对称操作,在(\vec{k})空间中观察到完全面外自旋极化,从而维持了FZPST。重要的是,我们观察到了巨大的自旋分裂,其中PST得以维持,这支持了大的自旋轨道耦合参数和小波长的PSH态。我们的(\vec{k}\cdot\vec{p})分析表明,FZPST对于非简并能带是稳健的,并且可以通过施加外部电场有效地进行控制,从而为未来的自旋电子学应用提供了一个有前景的平台。

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